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Volumn 61, Issue 5, 2013, Pages 1739-1747
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Self-limited grain growth, dielectric, leakage and ferroelectric properties of nanocrystalline BiFeO3 thin films by chemical solution deposition
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Author keywords
BiFeO3; Dielectric; Ferroelectric; Grain growth; Leakage
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Indexed keywords
BIFEO3;
CHEMICAL SOLUTION DEPOSITION;
CHEMICAL SOLUTION DEPOSITION METHOD;
COERCIVE FIELD;
CONDUCTION MECHANISM;
EXPONENTIAL DECAYS;
FERROELECTRIC PROPERTY;
FOWLER-NORDHEIM TUNNELING;
GROWTH MECHANISMS;
HIGH ELECTRIC FIELDS;
MICRO-STRAIN;
NANOCRYSTALLINES;
RELAXATION MODELS;
SPACE-CHARGE-LIMITED CURRENT;
DIELECTRIC MATERIALS;
ELECTRIC CONDUCTIVITY;
ELECTRIC FIELDS;
FERROELECTRIC MATERIALS;
FERROELECTRICITY;
GRAIN GROWTH;
ISOTHERMAL ANNEALING;
LEAKAGE (FLUID);
THIN FILMS;
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EID: 84873720294
PISSN: 13596454
EISSN: None
Source Type: Journal
DOI: 10.1016/j.actamat.2012.11.048 Document Type: Article |
Times cited : (50)
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References (45)
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