Physical and technological aspects of a-Si:H/c-Si hetero-junction solar cells

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 2, Issue , 2006, Pages 1433-1438

  Schmidt, M ^a   Angermann, H ^a   Conrad, E ^a   Korte, L ^a   Laades, A ^a   Maydell, K V ^a   Schubert, Ch ^a   Stangl, R ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; HETEROJUNCTIONS; SILICON COMPOUNDS; ULTRAVIOLET RADIATION;

GAP STATE DENSITY DISTRIBUTION; HETEROJUNCTION SOLAR CELLS;

SOLAR CELLS;

EID: 41749091571     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279722     Document Type: Conference Paper

References (19)

1. st IEEE PVSEC, Lake Buena Vista, 2005, pp. 889-894.
2. W. Shockley, H. J. Queisser, "Detailed Balance Limit of p-n Junction Solar Cells", J. of Appl. Phys. 32, 1961, pp. 510-519.
3. st IEEE PVSEC, Lake Buena Vista, 2005, pp. 866-871.
4. M. Schmidt et al., "Density of gap states in extremely thin a-Si:H layers on crystalline silicon wafers", J. of Non-Cryst. Solids 338-344, 2004, pp. 211-214.
5. R. Stangl, M. Kriegel, M. Schmidt, "AFORS-HET, Version 2.2, a numerical computer program for simulation of heterojunction solar cells and measurements", this conference.
6. Y. W. Lam, "Measurements of Commercial MIS Capacitors by the Surface-Photovoltage Method", Jpn. J. Appl. Phys. 12, 1973, pp. 916-923.
7. W. Henrion, et al., "Spectroscopic investigations of hydrogen termination, oxide coverage, roughness, and surface state density of silicon during native oxidation in air", Appl. Surf. Sci. 202, 2002, pp. 199-205.
8. H. Angermann et al., "Wet-chemical preparation and spectroscopic characterization of Si interfaces", Appl. Surf. Sci. 235, 2004, pp. 322-339.
9. A. Froitzheim, PhD thesis, "Hetero-Solarzellen aus amorphem und kristallinem Silizium", Philipps-Universität Marburg, 2003.
10. K. Winer, L. Ley," Surface states and the exponential valenceband tail in a-Si:H", Phys. Rev. B 36, 1987, pp. 6072-6078.
11. L. Korte, PhD thesis, "Die elektronische Struktur des amorph-kristallinen Silizium-Heterostruktur-Kontakts", Philipps- Universität Marburg, 2006.
12. W. B. Jackson et al., "Conduction-band density of states in hydrogenated amorphous Silicon determined by inverse photoemission", Phys. Rev. Lett. 53, 1984, pp. 1481-1484.
13. A. Laades, PhD thesis, "Preparation and Characterization of Amorphous/Crystalline Silicon Heterojunctions", Technische Universität Berlin, 2005.
14. th EPVSEC, Paris, 2004, pp. 1170-1173.
15. st IEEE PVSEC, New Orleans, 2002, pp. 1246-1249.
16. L. Korte, A. Laades, M. Schmidt, " Electronic states in a-Si:H/c-Si heterostructures" J. Non-Cryst. Sol., 2006, in press.
17. th EPVSEC, Barcelona, 2005, 822-825.
18. K. v. Maydell, E. Conrad, M. Schmidt, "Efficient silicon heterojunction solar cells based on p- and n-type substrates processed at temperatures <220°C", Prog. in Photovolt., in press.
19. E. Conrad et. al., "Optimization of interface properties in solar cells", this conference.