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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 1005-1010

A recombination model for a-Si:H/c-Si heterostructures

(5) Leendertz, C a Stangl, R a Schulze, T F a Schmidt, M a Korte, L a

a HAHN MEITNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AFORS-HET; BANDBENDING; BULK RECOMBINATION; EXCESS CARRIER CONCENTRATION; HETEROSTRUCTURES; INTERFACE PARAMETERS; LIFETIME MEASUREMENTS; NUMERICAL SIMULATION; PHYSICAL PROCESS; RECOMBINATION MODEL; RECOMBINATION PROCESS; SEMI-ANALYTICAL MODEL;

CARRIER CONCENTRATION; CARRIER LIFETIME; CRYSTALS; DEFECTS; HETEROJUNCTIONS; MATHEMATICAL MODELS; MODELS; SEMICONDUCTOR DOPING; SILICON; SURFACE CHEMISTRY;

COMPUTER SIMULATION;

EID: 77952574934 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200982698 Document Type: Conference Paper

Times cited : (36)

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