Low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001316-001320

  Shu, Brent ^a   Das, Ujjwal ^a   Jani, Omkar ^a   Hegedus, Steven ^a   Birkmire, Robert ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; A-SIC:H; CRYSTALLINE SILICONS; FRONT SURFACES; INTERDIGITATED BACK CONTACTS; LOW TEMPERATURES; MINORITY CARRIER LIFETIMES; SILICON HETEROJUNCTIONS; SILICON SURFACES; SOLAR CELL PROCESSING; STACK STRUCTURE; SURFACE RECOMBINATION VELOCITIES;

CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; OPTICAL PROPERTIES; PASSIVATION; SILICON; SILICON CARBIDE; SILICON NITRIDE; SILICON OXIDES; SOLAR CELLS;

SURFACE STRUCTURE;

EID: 77951532061     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411256     Document Type: Conference Paper

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