The emitter having microcrystalline surface in silicon heterojunction interdigitated back contact solar cells

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Ji, Kwang Sun ^a,b   Syn, Hojung ^a   Choi, Junghoon ^a   Lee, Heon Min ^a   Kim, Donghwan ^b  

^a LG Electronics Inc   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; AMORPHOUS SILICON (A-SI:H); BACK CONTACT; CELL SIZE; CONTACT CHARACTERISTICS; CRYSTALLINE SI; CURRENT VOLTAGE CURVE; FILL FACTOR; INTERDIGITATED BACK CONTACTS; INTERDIGITATED STRUCTURE; P-TYPE SILICON; PERFORMANCE PARAMETERS; SILICON HETEROJUNCTIONS; SURFACE PASSIVATION; TEST DEVICE; TRANSPARENT CONDUCTING OXIDE;

ELECTRIC PROPERTIES; ELECTRONIC EQUIPMENT TESTING; HETEROJUNCTIONS; MICROCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 84869133288     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NA05     Document Type: Article

References (20)

1. N. Mingirulli, J. Haschke, and B. Rech: Phys. Status Solidi: Rapid Res. Lett. 5 (2011) 159.
2. M. Lu, S. Bowden, U. Das, and R. Birkmire: Appl. Phys. Lett. 91 (2007) 063507.
3. D. Thibaut and S. De Vecchi: Energy Procedia 8 (2011) 294.
4. K. Ji, W. Choi, H. Syn, J. Choi, H. Lee, and D. Kim: 26th European Photovoltaic Solar Energy Conf., 2011, 2CV.4.56.
5. T. Sawada, N. Terada, S. Tsuge, T. Baba, T. Takahama, K. Wakisaka, S. Tsuda, and S. Nakano: Proc. 1st World Conf. Photovoltaic Energy Conversion, 1994, p. 1219.
6. S. Taira, Y. Yoshimine, T. Baba, M. Taguchi, H. Kanno, T. Kinoshita, H. Sakata, E. Maruyama, and M. Tanaka: Proc. 22nd European Photovoltaic Solar Energy Conf., 2007, p. 932.
7. L. Fesquet, S. Olibet, E. Vallat-Sauvain, A. Shah, and C. Ballif: Proc. 22nd European Photovoltaic Solar Energy Conf., 2007, p. 1678.
8. M. Taguchi, A. Terakawa, E. Maruyama, and M. Tanaka: Prog. Photovoltaics 13 (2005) 481.
9. H. Angermann, E. Conrad, L. Korte, J. Rappich, T. F. Schulze, and M. Schmidt: Mater. Sci. Eng. B 159-160 (2009) 219.
10. T. Mueller, S. Schwertheim, M. Scherff, and W. R. Fahrner: Appl. Phys. Lett. 92 (2008) 033504.
11. G. Claudio, R. De Rosa, F. Roca, D. Caputo, and M. Tucci: MRS Proc. 609 (2000) A13.4.
12. T. H. Wang, E. Iwaniczko, M. R. Page, D. H. Levi, Y. Yan, V. Yelundur, H. M. Branz, A. Rohatgi, and Q. Wang: Proc. 31st IEEE Photovoltaic Specialists Conf., 2005, p. 955.
13. S. De Wolf and M. Kondo: Appl. Phys. Lett. 90 (2007) 042111.
14. M. Z. Burrows, U. K. Das, R. L. Opila, S. De Wolf, and R. W. Birkmire: J. Vac. Sci. Technol. 26 (2008) 683.
15. S. Olibet, E. Vallat-Sauvain, C. Ballif, L. Korte, and L. Fesquet: Proc. 17th Photovoltaic Science and Engineering Conf., 2007, 3O-B2-02.
16. H. Fujiwara and M. Kondo: Appl. Phys. Lett. 90 (2007) 013503.
17. A. Froitzheim, K. Brendel, L. Elstner, W. Fuhs, K. Kliefoth, and M. Schmidt: J. Non-Cryst. Solids 299-302 (2002) 663.
18. E. Centurioni and D. Iencinella: IEEE Electron Device Lett. 24 (2003) 177.
19. A. Chen and K. Zhu: Sol. Energy 86 (2012) 393.
20. H. Yamamoto, Y. Takaba, Y. Komatsu, M. Yang, T. Hayakawa, M. Shimizu, and H. Takiguchi: Sol. Energy Mater. Sol. Cells 74 (2002) 525.