Tuning exchange bias in epitaxial Ni/MgO/TiN heterostructures integrated on Si(100)

Current Opinion in Solid State and Materials Science

Volumn 18, Issue 5, 2014, Pages 263-268

  Wu, F ^a   Rao, S S ^a,b   Prater, J T ^a,b   Zhu, Y T ^a   Narayan, J ^a  

^a North Carolina State University   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

Author keywords

Domain matching epitaxy; Epitaxial Ni thin films; Exchange bias; Pulsed laser deposition

Indexed keywords

DEPOSITION; NICKEL; PULSED LASER DEPOSITION; SILICON; THIN FILMS;

CONTINUOUS FILMS; DOMAIN MATCHING EPITAXY; EXCHANGE BIAS; ISLAND STRUCTURE; ISLAND-LIKE STRUCTURES; NI THIN FILMS; SI (100) SUBSTRATE; TUNNELING BARRIER;

PULSED LASERS;

EID: 84919392750     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cossms.2014.09.002     Document Type: Article

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