Oxygen vacancy enhanced room-temperature ferromagnetism in Sr 3SnO/c-YSZ/Si (001) heterostructures

MRS Communications

Volumn 4, Issue 1, 2014, Pages 7-13

  Lee, Y F ^a   Wu, F ^a   Narayan, J ^a   Schwartz, J ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FERROMAGNETISM; OXYGEN VACANCIES; PHOTOELECTRONS; PULSED LASER DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIA STABILIZED ZIRCONIA; ZIRCONIA; EPITAXIAL GROWTH; METAL ANALYSIS; OXYGEN; POLARONS; SILICON;

BOUND MAGNETIC POLARONS; EMPIRICAL RELATIONSHIPS; EPITAXIAL THIN FILMS; OXYGEN ANNEALING; OXYGEN VACANCY CONCENTRATION; POSTGROWTH ANNEALING; ROOM-TEMPERATURE FERROMAGNETISM; VACUUM-ANNEALING; SI(0 0 1);

METAL ANALYSIS; OXYGEN VACANCIES;

EID: 84897442684     PISSN: 21596859     EISSN: 21596867     Source Type: Journal    
DOI: 10.1557/mrc.2014.4     Document Type: Article

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