Tunnel Magnetoresistance and Spin-Transfer-Torque Switching in Polycrystalline Co2FeAl Full-Heusler-Alloy Magnetic Tunnel Junctions on Amorphous Si/SiO2 Substrates

Physical Review Applied

Volumn 2, Issue 2, 2014, Pages

  Wen, Zhenchao ^a   Sukegawa, Hiroaki ^a   Kasai, Shinya ^a   Inomata, Koichiro ^a   Mitani, Seiji ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; AMORPHOUS SILICON; BUFFER LAYERS; MAGNESIA; POLYCRYSTALLINE MATERIALS; SILICON ALLOYS; SUBSTRATES; TERNARY ALLOYS; TUNNEL JUNCTIONS; TUNNELLING MAGNETORESISTANCE;

AMORPHOUS SUBSTRATE; FERROMAGNETIC RESONANCE MEASUREMENTS; GILBERT DAMPING CONSTANT; INDUCED MAGNETIZATIONS; MAGNETIC TUNNEL JUNCTION; SPIN TRANSFER TORQUE; SPIN TRANSFER TORQUE SWITCHING; TUNNEL MAGNETORESISTANCE;

MAGNETIC DEVICES;

EID: 84919369082     PISSN: None     EISSN: 23317019     Source Type: Journal    
DOI: 10.1103/PhysRevApplied.2.024009     Document Type: Article

References (57)

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