Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co 2MnGe/MgO/Co2MnGe magnetic tunnel junctions

Journal of Physics Condensed Matter

Volumn 22, Issue 16, 2010, Pages

  Yamamoto, Masafumi ^a   Ishikawa, Takayuki ^a   Taira, Tomoyuki ^a   Li, Gui Fang ^a   Matsuda, Ken Ichi ^a   Uemura, Tetsuya ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION DEPENDENCE; HEUSLER ALLOYS; IN-GAP STATE; MAGNETIC TUNNEL JUNCTION; ROOM TEMPERATURE; SI ELECTRODES; TUNNEL BARRIER; TUNNEL MAGNETORESISTANCE;

COBALT; ELECTRIC RESISTANCE; ELECTRODES; GERMANIUM; LITHIUM BATTERIES; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; SILICON; SILICON ALLOYS; SPIN DYNAMICS; TUNNEL JUNCTIONS; WIND TUNNELS;

MANGANESE;

EID: 77950848894     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/16/164212     Document Type: Article

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