-
1
-
-
79951826370
-
Magnetic tunnel junction for nonvolatile CMOS logic
-
H. Ohno, T. Endoh, T. Hanyu, N. Kasai, and S. Ikeda, "Magnetic tunnel junction for nonvolatile CMOS logic," in IEDM Tech. Dig., 2010, pp. 218-221.
-
(2010)
IEDM Tech. Dig.
, pp. 218-221
-
-
Ohno, H.1
Endoh, T.2
Hanyu, T.3
Kasai, N.4
Ikeda, S.5
-
2
-
-
33847743417
-
A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM
-
1609379, IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
-
M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Ya-mane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao, and H. Kano, "A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-ram," in IEDM Tech. Dig., 2005, pp. 459-462. (Pubitemid 46370888)
-
(2005)
Technical Digest - International Electron Devices Meeting, IEDM
, vol.2005
, pp. 459-462
-
-
Hosomi, M.1
Yamagishi, H.2
Yamamoto, T.3
Bessho, K.4
Higo, Y.5
Yamane, K.6
Yamada, H.7
Shoji, M.8
Hachino, H.9
Fukumoto, C.10
Nagao, H.11
Kano, H.12
-
3
-
-
64549154395
-
Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM
-
T. Kishi, H. Yoda, T. Kai, T. Nagase, E. Kitagawa, M. Yoshikawa, K. Nishiyama, T. Daibou, M. Nagamine, M. Amano, S. Takahashi, M. Nakayama, N. Shimomura, H. Aikawa, S. Ikegawa, S. Yuasa, K. Yakushiji, H. Kubota, A. Fukushima, M. Oogane, T. Miyazaki, and K. Ando, "Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM," in IEDM Tech. Dig., 2008, pp. 309-312.
-
(2008)
IEDM Tech. Dig.
, pp. 309-312
-
-
Kishi, T.1
Yoda, H.2
Kai, T.3
Nagase, T.4
Kitagawa, E.5
Yoshikawa, M.6
Nishiyama, K.7
Daibou, T.8
Nagamine, M.9
Amano, M.10
Takahashi, S.11
Nakayama, M.12
Shimomura, N.13
Aikawa, H.14
Ikegawa, S.15
Yuasa, S.16
Yakushiji, K.17
Kubota, H.18
Fukushima, A.19
Oogane, M.20
Miyazaki, T.21
Ando, K.22
more..
-
4
-
-
34247863686
-
Magnetic tunnel junctions for spintronic memories and beyond
-
DOI 10.1109/TED.2007.894617, Special Issue on Spintronics
-
S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, Y. Ohno, T. Hanyu, and H. Ohno, "Magnetic tunnel junctions for spintronic memories and beyond," IEEE. Trans. Electron Devices, vol. 54, no. 5, pp. 991-1002, May 2007. (Pubitemid 46691554)
-
(2007)
IEEE Transactions on Electron Devices
, vol.54
, Issue.5
, pp. 991-1002
-
-
Ikeda, S.1
Hayakawa, J.2
Lee, Y.M.3
Matsukura, F.4
Ohno, Y.5
Hanyu, T.6
Ohno, H.7
-
5
-
-
57649087959
-
Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions
-
Aug.
-
S. Matsunaga, J. Hayakawa, S. Ikeda, K. Miura, H. Hasegawa, T. Endoh, H. Ohno, and T. Hanyu, "Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions," Appl. Phys. Express, vol. 1, p. 091301, Aug. 2008.
-
(2008)
Appl. Phys. Express
, vol.1
, pp. 091301
-
-
Matsunaga, S.1
Hayakawa, J.2
Ikeda, S.3
Miura, K.4
Hasegawa, H.5
Endoh, T.6
Ohno, H.7
Hanyu, T.8
-
6
-
-
77950229376
-
A 32-Mb SPRAM with 2T1R memory cell, localized bi-directional write driver and '1'/'0' dual-array equalized reference scheme
-
Apr.
-
R. Takemura, K. Kawahara, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, "A 32-Mb SPRAM with 2T1R memory cell, localized bi-directional write driver and '1'/'0' dual-array equalized reference scheme," IEEE J. Solid-State Circuits, vol. 45, no. 4, pp. 869-879, Apr. 2010.
-
(2010)
IEEE J. Solid-State Circuits
, vol.45
, Issue.4
, pp. 869-879
-
-
Takemura, R.1
Kawahara, K.2
Miura, K.3
Hayakawa, J.4
Ikeda, S.5
Lee, Y.M.6
Sasaki, R.7
Goto, Y.8
Ito, K.9
Meguro, T.10
Matsukura, F.11
Takahashi, H.12
Matsuoka, H.13
Ohno, H.14
-
7
-
-
0037091704
-
Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
-
DOI 10.1063/1.1459605
-
N. Nishimura, T. Hirai, A. Koganei, T. Ikeda, K. Okano, Y. Sekiguchi, and Y. Osada, "Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory," J. Appl. Phys., vol. 91, no. 8, p. 5246, Apr. 2002. (Pubitemid 34599000)
-
(2002)
Journal of Applied Physics
, vol.91
, Issue.8
, pp. 5246
-
-
Nishimura, N.1
Hirai, T.2
Koganei, A.3
Ikeda, T.4
Okano, K.5
Sekiguchi, Y.6
Osada, Y.7
-
8
-
-
60349086936
-
Tunnel magnetoresistance over 100% in MgO-based magnetic tunnel junction films with perpendicular magnetic-FePt electrodes
-
Nov.
-
M. Yoshikawa, E. Kitagawa, T. Nagase, T. Daibou, M. Nagamine, K. Nishiyama, T. Kishi, and H. Yoda, "Tunnel magnetoresistance over 100% in MgO-based magnetic tunnel junction films with perpendicular magnetic-FePt electrodes," IEEE Trans. Magn., vol. 44, no. 11, Nov. 2008.
-
(2008)
IEEE Trans. Magn.
, vol.44
, Issue.11
-
-
Yoshikawa, M.1
Kitagawa, E.2
Nagase, T.3
Daibou, T.4
Nagamine, M.5
Nishiyama, K.6
Kishi, T.7
Yoda, H.8
-
9
-
-
43049108020
-
Tunnelling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization-CoPt electrodes
-
G. Kim, Y. Sakuraba, M. Oogane, Y. Ando, and T. Miyazaki, "Tunnelling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization-CoPt electrodes," Appl. Phys. Lett., vol. 92, p. 172502, 2008.
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 172502
-
-
Kim, G.1
Sakuraba, Y.2
Oogane, M.3
Ando, Y.4
Miyazaki, T.5
-
10
-
-
40849120098
-
Sizable room-temperature magnetoresistance in cobalt based magnetic tunnel junctions with out-of-plane anisotropy
-
B. Carvello, C. Ducruet, B. Rodmacq, S. Auffret, E. Gautier, G. Gaudin, and B. Dieny, "Sizable room-temperature magnetoresistance in cobalt based magnetic tunnel junctions with out-of-plane anisotropy," Appl. Phys. Lett., vol. 92, p. 102508, 2008.
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 102508
-
-
Carvello, B.1
Ducruet, C.2
Rodmacq, B.3
Auffret, S.4
Gautier, E.5
Gaudin, G.6
Dieny, B.7
-
11
-
-
42149094954
-
Co/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy
-
J.-H. Park, C. Park, T. Jeong, M. T. Moneck, N.T. Nufer, and J.-G. Zhu, "Co/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy," J. Appl. Phys., vol. 103, p. 07A917, 2008.
-
(2008)
J. Appl. Phys.
, vol.103
-
-
Park, J.-H.1
Park, C.2
Jeong, T.3
Moneck, M.T.4
Nufer, N.T.5
Zhu, J.-G.6
-
12
-
-
77649231935
-
High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs
-
H. Yoda, T. Kishi, T. Nagase, M. Yoshikawa, K. Nishiyama, E. Kita-gawa, T. Daibou, M. Amano, N. Shimomura, S. Takahashi, T. Kai, M. Nakayama, H. Aikawa, S. Ikegawa, M. Nagamine, J. Ozeki, S. Mizukami, M. Oogane, Y. Ando, S. Yuasa, K. Yakushiji, H. Kubota, Y. Suzuki, Y. Nakatani, T. Miyazaki, and K. Ando, "High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs," Current Appl. Phys., vol. 10, p. e87, 2010.
-
(2010)
Current Appl. Phys.
, vol.10
-
-
Yoda, H.1
Kishi, T.2
Nagase, T.3
Yoshikawa, M.4
Nishiyama, K.5
Kita-Gawa, E.6
Daibou, T.7
Amano, M.8
Shimomura, N.9
Takahashi, S.10
Kai, T.11
Nakayama, M.12
Aikawa, H.13
Ikegawa, S.14
Nagamine, M.15
Ozeki, J.16
Mizukami, S.17
Oogane, M.18
Ando, Y.19
Yuasa, S.20
Yakushiji, K.21
Kubota, H.22
Suzuki, Y.23
Nakatani, Y.24
Miyazaki, T.25
Ando, K.26
more..
-
13
-
-
78650352183
-
Ultrathin Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions
-
K. Yakushiji, T. Saruya, H. Kubota, A. Fukushima, T. Nagahama, S. Yuasa, and K. Ando, "Ultrathin Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions," Appl. Phys. Lett., vol. 97, p. 232508, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 232508
-
-
Yakushiji, K.1
Saruya, T.2
Kubota, H.3
Fukushima, A.4
Nagahama, T.5
Yuasa, S.6
Ando, K.7
-
14
-
-
71949110875
-
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
-
K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. D. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, and H. Ohno, "MgO barrier- perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers," Appl. Phys. Lett., vol. 95, p. 232516, 2009.
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 232516
-
-
Mizunuma, K.1
Ikeda, S.2
Park, J.H.3
Yamamoto, H.4
Gan, H.D.5
Miura, K.6
Hasegawa, H.7
Hayakawa, J.8
Matsukura, F.9
Ohno, H.10
-
15
-
-
79951588579
-
Pd layer thickness dependence of tunnel magnetoresistance properties in CoFeB/MgO-based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers
-
K. Mizunuma, M. Yamanouchi, S. Ikeda, H. Sato, H. Yamamoto, H. D. Gan, K. Miura, J. Hayakawa, F. Matsukura, and H. Ohno, "Pd layer thickness dependence of tunnel magnetoresistance properties in CoFeB/MgO-based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers," Appl. Phys. Express, vol. 4, p. 023002, 2011.
-
(2011)
Appl. Phys. Express
, vol.4
, pp. 023002
-
-
Mizunuma, K.1
Yamanouchi, M.2
Ikeda, S.3
Sato, H.4
Yamamoto, H.5
Gan, H.D.6
Miura, K.7
Hayakawa, J.8
Matsukura, F.9
Ohno, H.10
-
16
-
-
77956031280
-
A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
-
S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction," Nat. Mater., vol. 9, p. 721, 2010.
-
(2010)
Nat. Mater.
, vol.9
, pp. 721
-
-
Ikeda, S.1
Miura, K.2
Yamamoto, H.3
Mizunuma, K.4
Gan, H.D.5
Endo, M.6
Kanai, S.7
Hayakawa, J.8
Matsukura, F.9
Ohno, H.10
-
17
-
-
85043607129
-
Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile VLSI
-
S. Ikeda, H. Sato, M. Yamanouchi, H. D. Gan, K. Miura, K. Mizunuma, S. Kanai, S. Fukami, F. Matsukura, N. Kasai, and H. Ohno, "Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile VLSI," SPIN, vol. 2, p. 1240003, 2012.
-
(2012)
SPIN
, vol.2
, pp. 1240003
-
-
Ikeda, S.1
Sato, H.2
Yamanouchi, M.3
Gan, H.D.4
Miura, K.5
Mizunuma, K.6
Kanai, S.7
Fukami, S.8
Matsukura, F.9
Kasai, N.10
Ohno, H.11
-
18
-
-
77956063200
-
Elec tric-field effects on thickness dependent magnetic anisotropy of sputtered structures
-
M. Endo, S. Kanai, S. Ikeda, F. Matsukura, and H. Ohno, "Elec tric-field effects on thickness dependent magnetic anisotropy of sputtered structures, "Appl. Phys. Lett., vol. 96, p. 212503, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 212503
-
-
Endo, M.1
Kanai, S.2
Ikeda, S.3
Matsukura, F.4
Ohno, H.5
-
19
-
-
78751486497
-
Spin torque switching of perpendicular TaCoFeBMgO-based magnetic tunnel junctions
-
D. C. Worledge, G. Hu, D. W. Abraham, J. Z. Sun, P. L. Trouilloud, J. Nowak, S. Brown, M. C. Gaidis, E. J. O'Sullivan, and R. P. Rober-tazzi, "Spin torque switching of perpendicular TaCoFeBMgO-based magnetic tunnel junctions," Appl. Phys. Lett., vol. 98, p. 022501, 2011.
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 022501
-
-
Worledge, D.C.1
Hu, G.2
Abraham, D.W.3
Sun, J.Z.4
Trouilloud, P.L.5
Nowak, J.6
Brown, S.7
Gaidis, M.C.8
O'Sullivan, E.J.9
Rober-Tazzi, R.P.10
-
20
-
-
79959289342
-
Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy
-
J. J. Nowak, R. P. Robertazzi, J. Z. Sun, G. Hu, D. W. Abraham, P. L. Trouilloud, S. Brown, M. C. Gaidis, E. J. O'Sullivan, W. J. Gallagher, and D. C. Worledge, "Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy," IEEE Magn. Lett., vol. 2, p. 3000204, 2011.
-
(2011)
IEEE Magn. Lett.
, vol.2
, pp. 3000204
-
-
Nowak, J.J.1
Robertazzi, R.P.2
Sun, J.Z.3
Hu, G.4
Abraham, D.W.5
Trouilloud, P.L.6
Brown, S.7
Gaidis, M.C.8
O'Sullivan, E.J.9
Gallagher, W.J.10
Worledge, D.C.11
-
21
-
-
79961092092
-
Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
-
H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, H. D. Gan, K. Mizunuma, R. Koizumi, F. Matsukura, and H. Ohno, "Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions," Appl. Phys. Lett., vol. 99, p. 042501, 2011.
-
(2011)
Appl. Phys. Lett.
, vol.99
, pp. 042501
-
-
Sato, H.1
Yamanouchi, M.2
Miura, K.3
Ikeda, S.4
Gan, H.D.5
Mizunuma, K.6
Koizumi, R.7
Matsukura, F.8
Ohno, H.9
-
22
-
-
84860520656
-
CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions
-
H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Mat-sukura, and H. Ohno, "CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions," IEEE Magn. Lett., vol. 3, p. 3000204, 2012.
-
(2012)
IEEE Magn. Lett.
, vol.3
, pp. 3000204
-
-
Sato, H.1
Yamanouchi, M.2
Miura, K.3
Ikeda, S.4
Koizumi, R.5
Mat-Sukura, F.6
Ohno, H.7
-
23
-
-
84863946704
-
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
-
H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure," Appl. Phys. Lett., vol. 101, p. 022414, 2012.
-
(2012)
Appl. Phys. Lett.
, vol.101
, pp. 022414
-
-
Sato, H.1
Yamanouchi, M.2
Ikeda, S.3
Fukami, S.4
Matsukura, F.5
Ohno, H.6
-
24
-
-
84880775560
-
-
J. H. Park, Y. Kim, W. C. Lim, S. H. Park, J. H. Kim, W. Kim, K. W. Kim, J. H. Jeong, K. S. Kim, H. Kim, Y. J. Lee, S. C. Oh, J. E. Lee, S. O. Park, S. Watts, D. Apalkov, V. Nikitin, M. Krounbi, S. Jeong, S. Choi, H. K. Kang, and C. Chung et al., in Symp. VLSI Technology Dig. Tech. Paper, 2012, pp. 58-59.
-
(2012)
Symp. VLSI Technology Dig. Tech. Paper
, pp. 58-59
-
-
Park, J.H.1
Kim, Y.2
Lim, W.C.3
Park, S.H.4
Kim, J.H.5
Kim, W.6
Kim, K.W.7
Jeong, J.H.8
Kim, K.S.9
Kim, H.10
Lee, Y.J.11
Oh, S.C.12
Lee, J.E.13
Park, S.O.14
Watts, S.15
Apalkov, D.16
Nikitin, V.17
Krounbi, M.18
Jeong, S.19
Choi, S.20
Kang, H.K.21
Chung, C.22
more..
-
25
-
-
84866363577
-
High spin torque efficiency of magnetic tunnel junctions with MgO/CoFeB/MgO free layer
-
G. Jan, Y. J. Wang, T. Moriyama, Y. J. Lee, M. Lin, T. Zhong, R. Y. Tong, and T. Torng, "High spin torque efficiency of magnetic tunnel junctions with MgO/CoFeB/MgO free layer," Appl. Phys. Express, vol. 5, p. 093008, 2012.
-
(2012)
Appl. Phys. Express
, vol.5
, pp. 093008
-
-
Jan, G.1
Wang, Y.J.2
Moriyama, T.3
Lee, Y.J.4
Lin, M.5
Zhong, T.6
Tong, R.Y.7
Torng, T.8
-
26
-
-
78650322870
-
Comparison of synthetic antiferromagnets and hard ferromagnets as reference layer in magnetic tunnel junctions with perpendicular magnetic anisotropy
-
S. Bandiera, R. C. Sousa, Y. Dahmane, D. Ducruet, C. Portemont, V. Baltz, S. Auffret, I. L. Prejbeanu, and B. Dieny, "Comparison of synthetic antiferromagnets and hard ferromagnets as reference layer in magnetic tunnel junctions with perpendicular magnetic anisotropy," IEEE Magn. Lett., vol. 1, p. 300204, 2010.
-
(2010)
IEEE Magn. Lett.
, vol.1
, pp. 300204
-
-
Bandiera, S.1
Sousa, R.C.2
Dahmane, Y.3
Ducruet, D.4
Portemont, C.5
Baltz, V.6
Auffret, S.7
Prejbeanu, I.L.8
Dieny, B.9
-
27
-
-
37649033021
-
Thermally assisted magnetization reversal in the presence of a spin-transfer torque
-
Z. Li and S. Zhang, "Thermally assisted magnetization reversal in the presence of a spin-transfer torque," Phys. Rev. B, vol. 69, p. 134416, 2004.
-
(2004)
Phys. Rev. B
, vol.69
, pp. 134416
-
-
Li, Z.1
Zhang, S.2
-
28
-
-
4444346633
-
Time-resolved of spin-transfer switching in a nanomagnet
-
R. H. Koch, J. A. Katine, and J. Z. Sun, "Time-resolved of spin-transfer switching in a nanomagnet," Phys. Rev. Lett., vol. 92, p. 088302, 2004.
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 088302
-
-
Koch, R.H.1
Katine, J.A.2
Sun, J.Z.3
|