Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

Applied Physics Letters

Volumn 100, Issue 13, 2012, Pages

  Gajek, M ^a   Nowak, J J ^a   Sun, J Z ^a   Trouilloud, P L ^a   O'Sullivan, E J ^a   Abraham, D W ^a   Gaidis, M C ^a   Hu, G ^a   Brown, S ^a   Zhu, Y ^a   Robertazzi, R P ^a   Gallagher, W J ^a   Worledge, D C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMERGING NON-VOLATILE MEMORY TECHNOLOGY; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNEL JUNCTION; NONVOLATILITY; PERPENDICULAR ANISOTROPY; PERPENDICULAR MAGNETIC ANISOTROPY; SCALING CAPABILITY; SINGLE CHIPS; SPIN TRANSFER TORQUE; SPIN-TORQUE SWITCHING;

MAGNETIC DEVICES; MAGNETIC STORAGE;

MRAM DEVICES;

EID: 84859552733     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694270     Document Type: Article

References (19)

1. T. Kishi, H. Yoda, T. Kai, T. Nagase, E. Kitagawa, M. Yoshikawa, K. Nishiyama, T. Daibou, M. Nagamine, M. Amano, in Proceedings of the IEEE International Electron Devices Meeting (IEEE, New York, 2008), p. 1-4.
2. S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, Nature Mater. 9, 721 (2010). 10.1038/nmat2804
3. D. C. Worledge, G. Hu, P. L. Trouilloud, D. W. Abraham, S. Brown, M. C. Gaidis, J. Nowak, E. J. O'Sullivan, R. P. Robertazzi, J. Z. Sun, in Proceedings of the IEEE International Devices Meeting (IEEE, New York, 2010), p. 296-299.
4. D. C. Worledge, G. Hu, D. W. Abraham, J. Z. Sun, P. L. Trouilloud, J. Nowak, S. Brown, M. C. Gaidis, E. J. O'Sullivan, and R. P. Robertazzi, Appl. Phys. Lett. 98, 022501 (2011). 10.1063/1.3536482
5. J. C. Slonczewski, J. Magn. Magn. Mater. 159, L1 (1996). 10.1016/0304-8853(96)00062-5
6. J. Z. Sun, Phys. Rev. B 62, 570 (2000). 10.1103/PhysRevB.62.570
7. S. Mangin, D. Ravelosona, J. A. Katine, M. J. Carey, B. D. Terris, and E. E. Fullerton, Nature Mater. 5, 210 (2006). 10.1038/nmat1595 (Pubitemid 43320636)
8. H. Meng and J.-P. Wang, Appl. Phys. Lett. 88, 172506 (2006). 10.1063/1.2198797
9. V. V. Zhirnov, R. K. Cavin, S. Menzel, E. Linn, S. Schmelzer, D. Bräuhaus, C. Schindler, and R. Waser, Proc. IEEE 98, 2185 (2010). 10.1109/JPROC.2010.2064271
10. T. Yamashita, V. S. Basker, T. Standaert, C.-C. Yeh, T. Yamamoto, K. Maitra, C.-H. Lin, J. Faltermeier, S. Kanakasabapathy, M. Wang, in Proceedings IEEE Symposium VLSI Technology Digest Technical Papers (IEEE, New York, 2011), pp. 14-15.
11. J. Z. Sun, R. P. Robertazzi, J. Nowak, P. L. Trouilloud, G. Hu, D. W. Abraham, M. C. Gaidis, S. L. Brown, E. J. O'Sullivan, W. J. Gallagher, Phys. Rev. B 84, 064413 (2011). 10.1103/PhysRevB.84.064413
12. K. Kinoshida, H. Utsumi, K. Suemitsu, H. Hada, and T. Sugibayashi, Jpn. J. Appl. Phys. 49, 08JB02 (2010). 10.1143/JJAP.49.08JB02
13. T. Mukai, B. Jinnai, Y. Fukumoto, N. Ohshima, H. Hada, and S. Samukawa, J. Appl. Phys. 102, 073303 (2007). 10.1063/1.2785849 (Pubitemid 47587787)
14. J. Norpoth, S. Dreyer, and C. Jooss, J. Phys. D: Appl. Phys. 41, 025001 (2008). 10.1088/0022-3727/41/2/025001
15. S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, Y. Ohno, T. Hanyu, and H. Ohno, IEEE Trans. Electron Devices 54, 991 (2007). 10.1109/TED.2007.894617 (Pubitemid 46691554)
16. R. H. Koch, J. A. Katine, and J. Z. Sun, Phys. Rev. Lett. 92, 088302 (2004). 10.1103/PhysRevLett.92.088302
17. D. Lacour, J. A. Katine, N. Smith, M. J. Carey, and J. R. Childress, Appl. Phys. Lett. 85, 4681 (2004). 10.1063/1.1819516 (Pubitemid 40009659)
18. M. Julliere, Phys. Lett. A, 54, 225 (1975). 10.1016/0375-9601(75)90174-7
19. J. J. Nowak, R. P. Robertazzi, J. Z. Sun, G. Hu, D. W. Abraham, P. L. Trouilloud, S. Brown, M. C. Gaidis, E. J. O'Sullivan, W. J. Gallagher, IEEE Magn. Lett. 2, 3000204 (2011). 10.1109/LMAG.2011.2155625