A new spin-functional metal-oxide-semiconductor field-effect transistor based on magnetic tunnel junction technology: Pseudo-spin-mosfet

Applied Physics Express

Volumn 3, Issue 1, 2010, Pages

  Shuto, Yusuke ^a,d   Nakane, Ryosho ^b,d   Wang, Wenhong ^c,d   Sukegawa, Hiroaki ^c,d   Yamamoto, Shuu'ichirou ^a,d   Tanaka, Masaaki ^b,d   Inomata, Koichiro ^c,d   Sugahara, Satoshi ^a,d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; DEVICE INTEGRATION; FUNCTIONAL METALS; HEUSLER ALLOYS; MAGNETIC TUNNEL JUNCTION; MAGNETIZATION CONFIGURATION; MOS-FET; MOSFETS; ROOM TEMPERATURE; SILICON-ON-INSULATOR SUBSTRATES; TRANSISTOR OPERATION; TUNNEL BARRIER;

DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; MAGNETIC DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; TUNNEL JUNCTIONS; WIND TUNNELS;

MOSFET DEVICES;

EID: 74849087759     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.013003     Document Type: Article

References (29)

1. S. Datta and B. Das: Appl. Phys. Lett. 56 (1990) 665.
2. M. Johnson: Science 260 (1993) 320.
3. D. J. Monsma et al.: Phys. Rev. Lett. 74 (1995) 5260.
4. S. van Dijken et al.: Appl. Phys. Lett. 80 (2002) 3364.
5. S. Sugahara and M. Tanaka: Appl. Phys. Lett. 84 (2004) 2307.
6. S. Sugahara: IEE Proc.-Circuits Devices Syst. 152 (2005) 355.
7. S. Sugahara: Phys. Status Solidi C 3 (2006) 4405.
8. B. T. Jonker: Proc. IEEE 91 (2003) 727.
9. O. M. J. van't Erve et al.: Appl. Phys. Lett. 91 (2007) 212109.
10. I. Appelbaum et al.: Nature 447 (2007) 295.
11. X. Lou et al.: Nat. Phys. 3 (2007) 197.
12. A. Fert and H. Jaffrès: Phys. Rev. B 64 (2001) 184420.
13. G. Schmidt et al.: Phys. Rev. B 62 (2000) R4790.
14. Y. Shuto et al.: J. Appl. Phys. 105 (2009) 07C933.
15. S. S. P. Parking et al.: Nat. Mater. 3 (2004) 862.
16. S. Yuasa et al.: Nat. Mater. 3 (2004) 868.
17. S. Ikeda et al.: Appl. Phys. Lett. 93 (2008) 082508.
18. S. Tsunegi et al.: Appl. Phys. Lett. 93 (2008) 112506.
19. W. H. Wang et al.: Appl. Phys. Lett. 93 (2008) 122506.
20. N. Tezuka et al.: Appl. Phys. Lett. 94 (2009) 162504.
21. W. H. Wang et al.: Appl. Phys. Lett. 95 (2009) 182502.
22. S. Yamamoto and S. Sugahara: presented at 11th Joint Magnetism and Magnetic Materials-Intermag Conf., DT-03, 2010.
23. M. Hosomi et al.: IEDM Tech. Dig., 2005, p. 459.
24. W. H. Wang et al.: Appl. Phys. Lett. 93 (2008) 182504.
25. Y. Shuto et al.: Proc. Int. Conf. Silicon Nano Devices in 2030, Tokyo, October 13-14, 2009, p. 148. (See also arXiv:0910.5238.)
26. S. Yamamoto and S. Sugahara: Jpn. J. Appl. Phys. 48 (2009) 043001.
27. D. D. Djayaprawira et al.: Appl. Phys. Lett. 86 (2005) 092502.
28. Y. M. Lee et al.: Appl. Phys. Lett. 89 (2006) 042506.
29. After we submitted the final version of this paper, we noticed the work by T. Inokuchi et al. (Int. Electron Device Meet., Baltimore, MD, December 7-9, 2009, paper no. 9.2), which showed pseudo-spin-MOSFET-like (not genuine spin-MOSFET) operations with magnetocurrent ratio of ∼1%.