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Science of Advanced Materials

Volumn 6, Issue 9, 2014, Pages 1993-2000

Growth and properties of Sn-doped ZnO nanowires for heterojunction diode application

(4) Al Heniti, S H a Badran, R I b Umar, Ahmad c Zaki, H M a,d

a KING ABDULAZIZ UNIVERSITY (Saudi Arabia)

b HASHEMITE UNIVERSITY (Jordan)

c NAJRAN UNIVERSITY (Saudi Arabia)

d Zagazig University (Egypt)

Author keywords

Electrical properties; Heterojunction diodes; I V characteristics; Sn doped ZnO nanowires

Indexed keywords

EID: 84913528452 PISSN: 19472935 EISSN: 19472943 Source Type: Journal
DOI: 10.1166/sam.2014.2126 Document Type: Article

Times cited : (16)

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