Current-voltage characteristics of a GaAs Schottky diode accounting for leakage paths

Applied Physics Letters

Volumn 76, Issue 1, 2000, Pages 124-125

  Ellis, J A ^a   Barnes, P A ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042730706     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125677     Document Type: Article

References (12)

1. W. Schottky, Naturwissenschaften 26, 843 (1938): Z. Phys. 113, 367 (1939); ibid. 118, 539 (1942).
2. W. Schottky, Naturwissenschaften 26, 843 (1938): Z. Phys. 113, 367 (1939); ibid. 118, 539 (1942).
3. W. Schottky, Naturwissenschaften 26, 843 (1938): Z. Phys. 113, 367 (1939); ibid. 118, 539 (1942).
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 335.
5. C. R. Crowell, Solid-State Electron. 8, 395 (1965).
6. W. Schockley and W. T. Read, Phys. Rev. 87, 835 (1952).
7. S. M. Sze, C. R. Crowell, and D. Kuhng, J. Appl. Phys. 36, 2534 (1964).
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11. S. Chand and J. Kumar, Semicond. Sci. Technol. 12, 899 (1997).
12. R. Pierret, Semiconductorr Device Fundamentals (Addison-Wesley, New York, 1996). pp. 276-277.