High performance aluminum-doped ZnO thin film transistors with high-K gate dielectrics fabricated at low temperature

Sensor Letters

Volumn 11, Issue 8, 2013, Pages 1509-1512

  Han, Dedong ^a   Cai, Jian ^a   Wang, Wei ^a   Wang, Liangliang ^a   Wang, Yi ^a   Liu, Lifeng ^a   Zhang, Shengdong ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Aluminum doped zinc oxide; High performance; High K; Low temperature processing; Thin film transistor

Indexed keywords

ALUMINUM; FABRICATION; GATE DIELECTRICS; HAFNIUM OXIDES; MAGNETRON SPUTTERING; OPTOELECTRONIC DEVICES; PROCESSING; SUBSTRATES; THIN FILM TRANSISTORS; ZINC OXIDE;

ALUMINUM-DOPED ZINC OXIDE; HIGH FIELD EFFECT MOBILITY; HIGH PERFORMANCE; HIGH-K; LOW TEMPERATURE PROCESSING; RADIO FREQUENCY MAGNETRON SPUTTERING; SOURCE AND DRAIN ELECTRODES; THIN-FILM TRANSISTOR (TFTS);

TEMPERATURE;

EID: 84899836499     PISSN: 1546198X     EISSN: 15461971     Source Type: Journal    
DOI: 10.1166/sl.2013.2837     Document Type: Conference Paper

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