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Applied Physics Letters

Volumn 98, Issue 26, 2011, Pages

Edge effect on band gap shift in Si nanowires with polygonal cross-sections

(4) Zhu, Ziming a Zhang, Ai a Ouyang, Gang a,b Yang, Guowei c

a HUNAN NORMAL UNIVERSITY (China)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c SUN YAT SEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP SHIFTS; EDGE EFFECT; PHYSICAL MECHANISM; SELF-EQUILIBRIUM; SEMICONDUCTOR NANOSTRUCTURES; SI NANOWIRE; STRAIN-DEPENDENT;

NANOWIRES;

ENERGY GAP;

EID: 79960096811 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3605683 Document Type: Article

Times cited : (36)

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