Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of nanowires

Applied Physics Letters

Volumn 103, Issue 15, 2013, Pages

  Lymperakis, L ^a   Weidlich, P H ^b   Eisele, H ^c   Schnedler, M ^b   Nys, J P ^d   Grandidier, B ^d   Stievenard D ^d   Dunin Borkowski, R E ^b   Neugebauer, J ^a   Ebert, Ph ^b  

^a MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CONDUCTION BANDS; GAN NANOWIRES; INTRINSIC PINNING; K POINTS; LOW DENSITY; NON-POLAR GAN;

ELECTRONIC STRUCTURE; NANOWIRES; SCANNING TUNNELING MICROSCOPY; SURFACE STATES;

GALLIUM NITRIDE;

EID: 84886906160     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4823723     Document Type: Article

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