Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V-1 s -1

Applied Physics Letters

Volumn 105, Issue 7, 2014, Pages

  Ma, Lu ^a   Nath, Digbijoy N ^b   Lee II, Edwin W ^b   Lee, Choong Hee ^b   Yu, Mingzhe ^a   Arehart, Aaron ^b   Rajan, Siddharth ^b   Wu, Yiying ^a  

^a OHIO STATE UNIVERSITY   (United States)

^b Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRON MOBILITY; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; SAPPHIRE; X RAY DIFFRACTION ANALYSIS;

ACOUSTIC DEFORMATION; HIGH RESOLUTION X RAY DIFFRACTION; IN-PLANE ANISOTROPY; IONIZED IMPURITY SCATTERING; ROOM TEMPERATURE MOBILITY; SPACE-CHARGE LIMITED; STRUCTURAL AND ELECTRICAL PROPERTIES; TEMPERATURE DEPENDENT;

SULFUR COMPOUNDS;

EID: 84911444974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4893143     Document Type: Article

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