SCOPUS 정보 검색 플랫폼

Applied Physics A: Materials Science and Processing

Volumn 108, Issue 3, 2012, Pages 693-700

Optical, electrical and morphological properties of p-type Mn-doped SnO 2 nanostructured thin films prepared by sol-gel process

(2) Ghodsi, F E a,b Mazloom, J b

a ISLAMIC AZAD UNIVERSITY (Iran)

b UNIVERSITY OF GUILAN (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; AFM IMAGE; ALCOHOLYSIS REACTIONS; DISPERSION ENERGIES; DISPERSION MODELS; DOPING CONCENTRATION; DOPING LEVELS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY; EMISSION LINES; EXTINCTION COEFFICIENTS; FOURIER TRANSFORM INFRARED; GLASS SUBSTRATES; GRAIN SIZE; HALL EFFECT MEASUREMENT; LOWER ENERGIES; MANGANESE CHLORIDE; MANGANESE CONCENTRATION; MANGANESE DOPING; MANGANESE INCORPORATION; MN-DOPED SNO; MN-DOPING; MORPHOLOGICAL PROPERTIES; NANOSTRUCTURED THIN FILM; NUMERICAL APPROXIMATIONS; OPTICAL TRANSMISSION SPECTRUM; P-TYPE; P-TYPE BEHAVIORS; PL MEASUREMENTS; ROOM TEMPERATURE; SOL-GEL DIP-COATING METHOD; SPECTRAL TRANSMITTANCE; TETRAGONAL RUTILE STRUCTURE; UV-VIS SPECTROPHOTOMETRY;

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; CHLORINE COMPOUNDS; DISPERSION (WAVES); DISPERSIONS; ELECTRIC CONDUCTIVITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MANGANESE; MANGANESE COMPOUNDS; OPTICAL CONSTANTS; OXIDE MINERALS; PHOTOLUMINESCENCE SPECTROSCOPY; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SPECTRUM ANALYSIS; SUBSTRATES; THERMOGRAVIMETRIC ANALYSIS; THIN FILMS; TIN; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84865387562 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-012-6952-0 Document Type: Article

Times cited : (71)

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