Formation of Sb-doped SnO2p-type ohmic contact for near-UV GaN -based LEDs by a CIO interlayer

Electrochemical and Solid-State Letters

Volumn 10, Issue 9, 2007, Pages 254-256

  Hong, Hyun Gi ^a   Song, June O ^b   Na, Hyunseok ^a   Kim, Hyunsoo ^c   Kim, Kyoung Kook ^c   Seong, Tae Yeon ^a  

^a Korea University   (South Korea)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; DOPING (ADDITIVES); ELECTRODES; GALLIUM NITRIDE; LIGHT EMITTING DIODES; OHMIC CONTACTS; PULSED LASER DEPOSITION;

FORWARD BIAS VOLTAGE; INTERLAYERS; SPECIFIC CONTACT RESISTANCE;

TIN DIOXIDE;

EID: 34547221909     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2748636     Document Type: Article

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