Structural and photoluminescence properties of SnO2:Ga films deposited on α-Al2O3 (0 0 0 1) by MOCVD

Journal of Luminescence

Volumn 130, Issue 7, 2010, Pages 1189-1193

  Pei, Xuan ^a   Ji, Feng ^a   Ma, Jin ^a   Ning, Ti ^a   Song, Zhenguo ^a   Tan, Yongliang ^a   Luan, Caina ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Annealing; Gallium doped tin oxide films; Pulse mode MOCVD

Indexed keywords

ACCEPTOR LEVELS; AMBIENT ATMOSPHERE; ANNEALING TEMPERATURES; AS-GROWN FILMS; ATOMIC RATIO; DONOR LEVELS; DOPED FILMS; GA FILM; GA-DOPED; LUMINESCENCE SPECTRUM; MOCVD; PHOTOLUMINESCENCE PROPERTIES; POST DEPOSITION ANNEALING; PREFERRED ORIENTATIONS; PULSE MODES; PULSE-MODE METALORGANIC CHEMICAL VAPOR DEPOSITION; ROOM TEMPERATURE; RUTILE STRUCTURE; ULTRA-VIOLET;

ANNEALING; ATMOSPHERIC TEMPERATURE; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; GALLIUM; OPTICAL PROPERTIES; OXIDE MINERALS; OXYGEN; OXYGEN VACANCIES; PHOTOLUMINESCENCE; SULFUR COMPOUNDS; TIN; TITANIUM COMPOUNDS;

OXIDE FILMS;

EID: 77950593456     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2010.02.019     Document Type: Article

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