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Journal of Materials Science: Materials in Electronics

Volumn 25, Issue 4, 2014, Pages 1664-1672

Structural and optoelectronic properties of indium doped SnO2 thin films deposited by sol gel technique

(2) Sujatha Lekshmy, S a Joy, K a

a MAR IVANIOS COLLEGE (India)

Author keywords

[No Author keywords available]

Indexed keywords

GAS SENSING ELECTRODES; GRAIN GROWTH; INDIUM; LIGHT EMITTING DIODES; PHOTOELECTRONS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SOLS; SUBSTRATES; THREE DIMENSIONAL; TIN; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GAS SENSING APPLICATIONS; INDIUM DOPED TIN OXIDES; OPTOELECTRONIC APPLICATIONS; OPTOELECTRONIC PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; PREFERRED ORIENTATIONS; SOL-GEL DIP COATING TECHNIQUE; TRANSPARENT CONDUCTING ELECTRODES;

THIN FILMS;

EID: 84897034973 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-014-1781-x Document Type: Article

Times cited : (50)

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