Enhanced polarization switching and energy storage properties of Pb 0.97La0.02(Zr0.95Ti0.05)O 3 antiferroelectric thin films with LaNiO3 oxide top electrodes

Applied Physics Letters

Volumn 102, Issue 14, 2013, Pages

  Ge, Jun ^a   Dong, Xianlin ^a   Chen, Ying ^a   Cao, Fei ^a   Wang, Genshui ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI FERROELECTRICS; ANTIFERROELECTRIC THIN FILMS; ENERGY STORAGE PROPERTIES; ENHANCED POLARIZATION; HIGH ENERGY DENSITIES; POLARIZATION SWITCHING; ROOM TEMPERATURE; TEMPERATURE REGIMES;

ANTIFERROELECTRICITY; ENERGY EFFICIENCY; ENERGY STORAGE; LEAD; OPTICAL SWITCHES; PLATINUM; SOL-GEL PROCESS; THIN FILM CIRCUITS; THIN FILMS; ZIRCONIUM;

ELECTRODES;

EID: 84876399778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4801517     Document Type: Article

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