Effects of the slab thickness on the crystal and electronic structures of In2O3(ZnO)m revealed by first-principles calculations

Journal of Solid State Chemistry

Volumn 222, Issue , 2015, Pages 25-36

  Wen, Jing ^a,b   Zhang, Xitian ^a,b   Gao, Hong ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b HARBIN NORMAL UNIVERSITY   (China)

Author keywords

Crystal structures; Electronic structures; First principles calculations; Transparent conducting oxides

Indexed keywords

CALCULATIONS; CRYSTAL STRUCTURE; DANGLING BONDS; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; INDIUM; MODEL STRUCTURES; OPTOELECTRONIC DEVICES; ZINC OXIDE;

ANISOTROPIC FEATURES; CONDUCTION ELECTRONS; ELECTRON EFFECTIVE MASS; FIRST-PRINCIPLES CALCULATION; GROUND-STATE STRUCTURES; STATISTICAL EQUILIBRIUM; TRANSPARENT CONDUCTING OXIDE; ZIGZAG CONFIGURATION;

CRYSTAL ATOMIC STRUCTURE;

EID: 84910619977     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2014.11.005     Document Type: Article

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