First-principles investigation of R2O3(ZnO)3 (R=Al, Ga, and In) in homologous series of compounds

Journal of Solid State Chemistry

Volumn 181, Issue 1, 2008, Pages 137-142

  Yoshioka, Satoru ^a   Toyoura, Kazuaki ^a   Oba, Fumiyasu ^a   Kuwabara, Akihide ^a   Matsunaga, Katsuyuki ^a   Tanaka, Isao ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Electronic structures; First principles calculations; Homologous compounds; Transparent semiconductors; Zinc oxides

Indexed keywords

CONDUCTION BANDS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STATES; ELECTRONIC STRUCTURE; HIGH TEMPERATURE EFFECTS; ZINC OXIDE;

FIRST-PRINCIPLES CALCULATIONS; HOMOLOGOUS COMPOUNDS; TRANSPARENT SEMICONDUCTORS;

ALUMINUM COMPOUNDS;

EID: 37549007193     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2007.11.006     Document Type: Article

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