Possible n-type carrier sources in In 2O 3(ZnO) k

Chemistry of Materials

Volumn 24, Issue 1, 2012, Pages 106-114

  Peng, Haowei ^a   Song, Jung Hwan ^a   Hopper, E Mitchell ^b   Zhu, Qimin ^b   Mason, Thomas O ^b   Freeman, Arthur J ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

Author keywords

first principles; In 2O 3(ZnO) k; n type defects

Indexed keywords

ATOMIC SITES; CONDUCTION-BAND MINIMUM; DEFECT COMPLEX; DEFECT FORMATION ENERGIES; DEFECT PROPERTY; ELECTRICAL CONDUCTIVITY; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES; FORMATION ENERGIES; HIGH ANISOTROPY; HIGH TEMPERATURE; HOMOLOGOUS COMPOUNDS; INTERSTITIALS; POTENTIAL APPLICATIONS; STRONG ANISOTROPY; THERMOELECTRIC MATERIAL; TOTAL ENERGY; TRANSITION ENERGY LEVELS; TRANSITION LEVEL; TRANSPARENT CONDUCTING OXIDE; ZNO;

ANISOTROPY; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE APPLICATIONS; INDIUM; OXYGEN VACANCIES; THERMOELECTRICITY; ZINC; ZINC OXIDE;

CRYSTAL DEFECTS;

EID: 84855652185     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm202020g     Document Type: Conference Paper

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