Novel film growth technique of single crystalline In2O3(ZnO)m (m=integer) homologous compound

Thin Solid Films

Volumn 411, Issue 1, 2002, Pages 147-151

  Nomura, Kenji ^a,b   Ohta, Hiromichi ^a   Ueda, Kazushige ^b   Orita, Masahiro ^a   Hirano, Masahiro ^a   Hosono, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Homologous compound; In2O3(ZnO)m (m=integer); Single crystalline film; Solid state diffusion

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; INDIUM COMPOUNDS; PULSED LASER DEPOSITION; SINGLE CRYSTALS; X RAY DIFFRACTION; ZIRCONIA;

SOLID STATE DIFFUSION;

THIN FILMS;

EID: 0037157420     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00204-3     Document Type: Conference Paper

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