The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics

Advanced Materials

Volumn 26, Issue 42, 2014, Pages 7241-7246

  Kim, Jiye ^a   Jang, Jaeyoung ^a   Kim, Kyunghun ^a   Kim, Haekyoung ^b   Kim, Se Hyun ^b   Park, Chan Eon ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Yeungnam University   (South Korea)

Author keywords

fluorinated polymers; gate bias stabilities; organic field effect transistors

Indexed keywords

CHARGE TRANSFER; DIELECTRIC MATERIALS; FLUORINE CONTAINING POLYMERS; GATE DIELECTRICS; ORGANIC FIELD EFFECT TRANSISTORS; ORGANIC POLYMERS; POLYMERS; RECONFIGURABLE HARDWARE; TRANSISTORS;

DEVICE STABILITY; ENERGETIC BARRIERS; FLUORINATED POLYMERS; GATE BIAS; GATE-BIAS STRESS;

FIELD EFFECT TRANSISTORS;

NITROGEN; POLYMER; POLYSTYRENE DERIVATIVE; SILICON DIOXIDE;

CHEMICAL PHENOMENA; CHEMISTRY; ELECTRIC CAPACITANCE; EQUIPMENT DESIGN; HALOGENATION; KINETICS; SEMICONDUCTOR;

ELECTRIC CAPACITANCE; EQUIPMENT DESIGN; HALOGENATION; HYDROPHOBIC AND HYDROPHILIC INTERACTIONS; KINETICS; NITROGEN; POLYMERS; POLYSTYRENES; SEMICONDUCTORS; SILICON DIOXIDE; TRANSISTORS, ELECTRONIC;

EID: 84909953275     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201402363     Document Type: Article

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