The effects of organic material-treated SiO 2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors

Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

  Park, Mijeong ^a   Jang, Jaeyoung ^a   Park, Seonuk ^a   Kim, Jiye ^a   Seong, Jiehyun ^b   Hwang, Jiyoung ^b   Eon Park, Chan ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b LG Chemical Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CONDUCTANCE; DIELECTRIC SURFACE; ELECTRICAL CHARACTERISTIC; ELECTRICAL MEASUREMENT; IN-GA-ZN-O; ORGANIC DIELECTRICS; ORGANIC MATERIALS; POLYMER THIN FILMS; POSITIVE VALUE; SIMPLE MODIFICATIONS; SURFACE FUNCTIONAL GROUPS; SURFACE-MODIFIED; THIN-FILM TRANSISTOR (TFTS);

DIELECTRIC DEVICES; FUNCTIONAL GROUPS; GALLIUM; GATE DIELECTRICS; SELF ASSEMBLED MONOLAYERS; SILICON COMPOUNDS; THIN FILMS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84863367631     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3691920     Document Type: Article

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