-
2
-
-
0032535029
-
Synaptic modifications in cultured hippocampal neurons: Dependence on spike timing, synaptic strength, and postsynaptic cell type
-
Bi, Guo-qiang and Mu-ming Poo, "Synaptic modifications in cultured hippocampal neurons: Dependence on spike timing, synaptic strength, and postsynaptic cell type", The Journal of Neuroscience, vol. 18, no. 24, pp. 10 464-10 472, 1998.
-
(1998)
The Journal of Neuroscience
, vol.18
, Issue.24
, pp. 10464-10472
-
-
Bi, G.-Q.1
Poo M.-.2
-
3
-
-
84871773015
-
Specifications of nanoscale devices and circuits for neuromorphic computational systems
-
B. Rajendran, Y. Liu, J. sun Seo, K. Gopalakrishnan, L. Chang, D. Friedman, and M. Ritter, "Specifications of nanoscale devices and circuits for neuromorphic computational systems", Electron Devices, IEEE Transactions on, vol. 60, no. 1, pp. 246-253, 2013.
-
(2013)
Electron Devices, IEEE Transactions On
, vol.60
, Issue.1
, pp. 246-253
-
-
Rajendran, B.1
Liu, Y.2
Sun Seo, J.3
Gopalakrishnan, K.4
Chang, L.5
Friedman, D.6
Ritter, M.7
-
4
-
-
46749093701
-
Memristive switching mechanism for metal/oxide/metal nanodevices
-
J. Joshua Yang, Matthew D. Pickett, Xuema Li, Douglas A. A. Ohlberg, Duncan R. Stewart and R. Stanley Williams, "Memristive switching mechanism for metal/oxide/metal nanodevices", Nature Nanotechnology, vol. 101, no. 11, pp. 429-433, 2008.
-
(2008)
Nature Nanotechnology
, vol.101
, Issue.11
, pp. 429-433
-
-
Joshua Yang, J.1
Pickett, M.D.2
Li, X.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Stanley Williams, R.6
-
5
-
-
0015127532
-
Memristor-the missing circuit element
-
L. Chua, "Memristor-the missing circuit element", Circuit Theory, IEEE Transactions on, vol. 18, no. 5, pp. 507-519, 1971.
-
(1971)
Circuit Theory, IEEE Transactions On
, vol.18
, Issue.5
, pp. 507-519
-
-
Chua, L.1
-
6
-
-
70350092588
-
Switching dynamics in titanium dioxide memristive devices
-
M. Pickett, D. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart, and R. Williams, "Switching dynamics in titanium dioxide memristive devices", Journal of Applied Physics, vol. 106, no. 7, pp. 074 508-074 508-6, 2009.
-
(2009)
Journal of Applied Physics
, vol.106
, Issue.7
, pp. 074508-0745086
-
-
Pickett, M.1
Strukov, D.2
Borghetti, J.L.3
Yang, J.J.4
Snider, G.S.5
Stewart, D.R.6
Williams, R.7
-
7
-
-
84885651650
-
Nanoscale electronic synapses using phase change devices
-
May
-
B. L. Jackson, B. Rajendran, G. S. Corrado, M. Breitwisch, G. W. Burr, R. Cheek, K. Gopalakrishnan, S. Raoux, C. T. Rettner, A. Padilla, A. G. Schrott, R. S. Shenoy, B. N. Kurdi, C. H. Lam, and D. S. Modha, "Nanoscale electronic synapses using phase change devices", J. Emerg. Technol. Comput. Syst., vol. 9, no. 2, pp. 12:1-12:20, May 2013.
-
(2013)
J. Emerg. Technol. Comput. Syst.
, vol.9
, Issue.2
, pp. 121-1220
-
-
Jackson, B.L.1
Rajendran, B.2
Corrado, G.S.3
Breitwisch, M.4
Burr, G.W.5
Cheek, R.6
Gopalakrishnan, K.7
Raoux, S.8
Rettner, C.T.9
Padilla, A.10
Schrott, A.G.11
Shenoy, R.S.12
Kurdi, B.N.13
Lam, C.H.14
Modha, D.S.15
-
8
-
-
84878952572
-
STDP and STDP variations with memristors for spiking neuromorphic learning systems
-
T. Serrano-Gotarredona, T. Masquelier, T. Prodromakis, G. Indiveri, and B. Linares-Barranco, "STDP and STDP variations with memristors for spiking neuromorphic learning systems", Frontiers in Neuroscience, vol. 7, no. 2, 2013.
-
(2013)
Frontiers in Neuroscience
, vol.7
, Issue.2
-
-
Serrano-Gotarredona, T.1
Masquelier, T.2
Prodromakis, T.3
Indiveri, G.4
Linares-Barranco, B.5
-
11
-
-
84880877562
-
Synaptic behavior and STDP of asymmetric nanoscale memristors in biohybrid systems
-
A. Williamson, L. Schumann, L. Hiller, F. Klefenz, I. Hoerselmann, P. Husar, and A. Schober, "Synaptic behavior and STDP of asymmetric nanoscale memristors in biohybrid systems", Nanoscale, vol. 5, pp. 7297-7303, 2013.
-
(2013)
Nanoscale
, vol.5
, pp. 7297-7303
-
-
Williamson, A.1
Schumann, L.2
Hiller, L.3
Klefenz, F.4
Hoerselmann, I.5
Husar, P.6
Schober, A.7
-
12
-
-
84866318727
-
Switching dynamics and charge transport studies of resistive random access memory devices
-
B. Long, Y. Li, S. Mandal, R. Jha, and K. Leedy, "Switching dynamics and charge transport studies of resistive random access memory devices", Applied Physics Letters, vol. 101, no. 11, 2012.
-
(2012)
Applied Physics Letters
, vol.101
, Issue.11
-
-
Long, B.1
Li, Y.2
Mandal, S.3
Jha, R.4
Leedy, K.5
-
13
-
-
0031012615
-
Regulation of synaptic efficacy by coincidence of postsynaptic APs and EPSPs
-
H. Markram, J. Lübke, M. Frotscher, and B. Sakmann, "Regulation of synaptic efficacy by coincidence of postsynaptic APs and EPSPs", Science, vol. 275, pp. 213-215, 1997.
-
(1997)
Science
, vol.275
, pp. 213-215
-
-
Markram, H.1
Lübke, J.2
Frotscher, M.3
Sakmann, B.4
-
14
-
-
84878290517
-
Memristor model comparison
-
A. Ascoli, F. Corinto, V. Senger, and R. Tetzlaff, "Memristor model comparison", Circuits and Systems Magazine, IEEE, vol. 13, no. 2, pp. 89-105, 2013.
-
(2013)
Circuits and Systems Magazine, IEEE
, vol.13
, Issue.2
, pp. 89-105
-
-
Ascoli, A.1
Corinto, F.2
Senger, V.3
Tetzlaff, R.4
-
15
-
-
43049126833
-
The missing memristor found
-
Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart and R. Stanley Williams, "The missing memristor found", Nature, vol. 453, pp. 80-83, 2008.
-
(2008)
Nature
, vol.453
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Stanley Williams, R.4
-
16
-
-
36849139656
-
Electric tunnel effect between dissimilar electrodes separated by a thin insulating film
-
J. G. Simmons, "Electric tunnel effect between dissimilar electrodes separated by a thin insulating film", Journal of Applied Physics, vol. 34, no. 9, 1963.
-
(1963)
Journal of Applied Physics
, vol.34
, Issue.9
-
-
Simmons, J.G.1
-
17
-
-
79955708416
-
2 resistive-switching memory
-
2 resistive-switching memory", Journal of Applied Physics, vol. 109, no. 8, 2011.
-
(2011)
Journal of Applied Physics
, vol.109
, Issue.8
-
-
Lin, K.-L.1
Hou, T.-H.2
Shieh, J.3
Lin, J.-H.4
Chou, C.-T.5
Lee, Y.-J.6
-
18
-
-
84891560449
-
Area and thickness scaling of forming voltage of resistive switching memories
-
A. Chen, "Area and thickness scaling of forming voltage of resistive switching memories", Electron Device Letters, IEEE, no. 1, pp. 57-59, 2014.
-
(2014)
Electron Device Letters, IEEE
, Issue.1
, pp. 57-59
-
-
Chen, A.1
-
19
-
-
84862780839
-
2-x/Ru RRAM devices for digital and analog nonvolatile memory applications
-
2-x/Ru RRAM devices for digital and analog nonvolatile memory applications", IEEE Electron Device Letters, vol. 33, no. 5, 2012.
-
(2012)
IEEE Electron Device Letters
, vol.33
, Issue.5
-
-
Long, B.1
Li, Y.2
Jha, R.3
-
20
-
-
27944431781
-
Convergence of stochastic learning in perceptrons with binary synapses
-
Jun.
-
W. Senn and S. Fusi, "Convergence of stochastic learning in perceptrons with binary synapses", Phys. Rev. E, vol. 71, p. 061907, Jun. 2005.
-
(2005)
Phys. Rev. E
, vol.71
, pp. 061907
-
-
Senn, W.1
Fusi, S.2
-
21
-
-
84879978368
-
Bio-inspired stochastic computing using binary CBRAM synapses
-
July
-
M. Suri, D. Querlioz, O. Bichler, G. Palma, E. Vianello, D. Vuillaume, C. Gamrat, and B. DeSalvo, "Bio-inspired stochastic computing using binary CBRAM synapses", Electron Devices, IEEE Transactions on, vol. 60, no. 7, pp. 2402-2409, July 2013.
-
(2013)
Electron Devices, IEEE Transactions On
, vol.60
, Issue.7
, pp. 2402-2409
-
-
Suri, M.1
Querlioz, D.2
Bichler, O.3
Palma, G.4
Vianello, E.5
Vuillaume, D.6
Gamrat, C.7
De Salvo, B.8
-
22
-
-
84904736414
-
Stochastic learning in oxide binary synaptic device for neuromorphic computing
-
Shimeng Yu, Bin Gao, Zheng Fang, Hongyu Yu, Jinfeng Kang, H. S. Philip Wong, "Stochastic learning in oxide binary synaptic device for neuromorphic computing", Frontiers in Neuroscience, vol. 7, 2013.
-
(2013)
Frontiers in Neuroscience
, vol.7
-
-
Yu, S.1
Gao, B.2
Fang, Z.3
Yu, H.4
Kang, J.5
Philip Wong, H.S.6
-
23
-
-
84856999285
-
On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization
-
Dec.
-
S. Yu, X. Guan, and H. S. P. Wong, "On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization", in Electron Devices Meeting (IEDM), 2011 IEEE International, Dec. 2011, pp. 17.3.1-17.3.4.
-
(2011)
Electron Devices Meeting (IEDM), 2011 IEEE International
, pp. 1731-1734
-
-
Yu, S.1
Guan, X.2
Wong, H.S.P.3
-
24
-
-
81855194335
-
Improved resistive switching of textured ZnO thin films grown on Ru electrodes
-
Zi-Jheng Liu, Jen-Chun Chou, Shih-Yuan Wei, Jon-Yiew Gan, Tri-Rung Yew, "Improved resistive switching of textured ZnO thin films grown on Ru electrodes", Electron Device Letters, IEEE, vol. 32, no. 12, pp. 1728-1730, 2011.
-
(2011)
Electron Device Letters, IEEE
, vol.32
, Issue.12
, pp. 1728-1730
-
-
Liu, Z.-J.1
Chou, J.-C.2
Wei, S.-Y.3
Gan, J.-Y.4
Yew, T.-R.5
|