Area and thickness scaling of forming voltage of resistive switching memories

IEEE Electron Device Letters

Volumn 35, Issue 1, 2014, Pages 57-59

  Chen, An ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

forming voltage; RRAM; scaling

Indexed keywords

FORMING VOLTAGES; LOCAL FIELD ENHANCEMENT; PROBABILITY ANALYSIS; RESISTIVE SWITCHING MEMORY; RRAM; SCALING; STATISTICAL DISTRIBUTION; THICKNESS SCALING;

ANALYTICAL MODELS; MODELS; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 84891560449     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2288262     Document Type: Article

References (11)

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