메뉴 건너뛰기




Volumn 32, Issue 12, 2011, Pages 1728-1730

Improved resistive switching of textured ZNO thin films grown on ru electrodes

Author keywords

Nonvolatile memory; Resistance random access memory; Resistive switching; ZnO

Indexed keywords

LOW OXYGEN; NARROW DISTRIBUTION; NON-VOLATILE MEMORIES; ON/OFF RATIO; PT ELECTRODE; RESET VOLTAGE; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SWITCHING PARAMETERS; ZNO; ZNO THIN FILM;

EID: 81855194335     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2167710     Document Type: Article
Times cited : (32)

References (11)
  • 3
    • 49149097171 scopus 로고    scopus 로고
    • Effects of metal electrodes on the resistive memory switching property of NiO thin films
    • Jul.
    • C. B. Lee, B. S. Kang, A. Benayad, M. J. Lee, S.-E. Ahn, K. H. Kim, G. Stefanovich, Y. Park, and I. K. Yoo, "Effects of metal electrodes on the resistive memory switching property of NiO thin films," Appl. Phys. Lett., vol. 93, no. 4, pp. 042 115-1-042 115-3, Jul. 2008.
    • (2008) Appl. Phys. Lett. , vol.93 , Issue.4 , pp. 0421151-0421153
    • Lee, C.B.1    Kang, B.S.2    Benayad, A.3    Lee, M.J.4    Ahn, S.-E.5    Kim, K.H.6    Stefanovich, G.7    Park, Y.8    Yoo, I.K.9
  • 4
    • 78650257686 scopus 로고    scopus 로고
    • Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films
    • Nov.
    • D. Panda, A. Dhar, and S. K. Ray, "Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films," J. Appl. Phys., vol. 108, no. 10, pp. 104 513-1-104 513-7, Nov. 2010.
    • (2010) J. Appl. Phys. , vol.108 , Issue.10 , pp. 1045131-1045137
    • Panda, D.1    Dhar, A.2    Ray, S.K.3
  • 5
    • 38349103053 scopus 로고    scopus 로고
    • Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
    • Jan.
    • W.-Y. Chang, Y.-C. Lai, T.-B. Wu, S.-F. Wang, F. Chen, and M.-J. Tsai, "Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications," Appl. Phys. Lett., vol. 92, no. 2, pp. 022 110-1-022 110-3, Jan. 2008.
    • (2008) Appl. Phys. Lett. , vol.92 , Issue.2 , pp. 0221101-0221103
    • Chang, W.-Y.1    Lai, Y.-C.2    Wu, T.-B.3    Wang, S.-F.4    Chen, F.5    Tsai, M.-J.6
  • 6
    • 45149087197 scopus 로고    scopus 로고
    • Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories
    • Jun.
    • N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, and B. Yu, "Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories," Appl. Phys. Lett., vol. 92, no. 23, pp. 232 112-1-232 112-3, Jun. 2008.
    • (2008) Appl. Phys. Lett. , vol.92 , Issue.23 , pp. 2321121-2321123
    • Xu, N.1    Liu, L.2    Sun, X.3    Liu, X.4    Han, D.5    Wang, Y.6    Han, R.7    Kang, J.8    Yu, B.9


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.