Lead- and alkali-metal-free BaTiO3-Bi(Mg0.5Ti0.5)O3-BiFeO3solid-solution thin films with high dielectric constant prepared on Si substrates by solution-based method

Japanese Journal of Applied Physics

Volumn 53, Issue 9, 2014, Pages

  Kimura, Junichi ^a   Mohamed Tahar, Chentir ^a   Shimizu, Takao ^a   Uchida, Hiroshi ^b   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b SOPHIA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALKALI METALS; BARIUM TITANATE; CRYSTAL STRUCTURE; DEPOSITION; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES OF SOLIDS; FILM PREPARATION; SILICON;

CHEMICAL SOLUTION DEPOSITION; HIGH DIELECTRIC CONSTANTS; LATTICE SPACING; PB(ZR , TI)O3; PSEUDOCUBIC; RELATIVE DIELECTRIC CONSTANT; SI SUBSTRATES; SOLUTION-BASED PROCESS;

THIN FILMS;

EID: 84908082396     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.09PA12     Document Type: Conference Paper

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