High throughput method for K0.5Na0.5NbO3 thin films preparation by chemical solution deposition

Journal of the European Ceramic Society

Volumn 27, Issue 13-15, 2007, Pages 3785-3788

  Schroeter, C ^a,b   Wessler, B ^a   Eng, L M ^b  

^a SIEMENS AG   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Films; High throughput; Niobates; Sol gel processes

Indexed keywords

ALKALI METALS; DEPOSITION; DIELECTRIC PROPERTIES; FERROELECTRIC THIN FILMS; SILICON WAFERS; SOL-GEL PROCESS; SYNTHESIS (CHEMICAL);

CHEMICAL SOLUTION DEPOSITION; HIGH THROUGHPUT METHOD;

POTASSIUM COMPOUNDS;

ALKALI METALS; DEPOSITION; DIELECTRIC PROPERTIES; FERROELECTRIC THIN FILMS; POTASSIUM COMPOUNDS; SILICON WAFERS; SOL-GEL PROCESS; SYNTHESIS (CHEMICAL);

EID: 34347328179     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2007.02.033     Document Type: Article

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