Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2700-2711

  Cho, Chae Ryong ^a   Lee, Won Jae ^a   Yu, Byoung Gon ^a   Kim, Bo Woo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COERCIVE FORCE; CRYSTAL MICROSTRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; MAGNETIC HYSTERESIS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; SOL-GELS; THIN FILMS; X RAY CRYSTALLOGRAPHY;

CAPACITANCE-VOLTAGE CURVES; FERROELECTRIC RESPONSE; RAYLEIGH LAW;

DIELECTRIC FILMS;

EID: 0032607931     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371114     Document Type: Article

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