Facile modification of Cu source-drain (S/D) electrodes for high-performance, low-voltage n-channel organic thin film transistors (OTFTs) based on C60

Organic Electronics

Volumn 15, Issue 11, 2014, Pages 3259-3267

  Su, Yaorong ^a   Xie, Weiguang ^b   Xu, Jianbin ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b JINAN UNIVERSITY   (China)

Author keywords

C60; Electron injection; High performance; Surface modification; Work function

Indexed keywords

CAPACITANCE; ELECTRODES; ELECTRON INJECTION; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; SURFACE TREATMENT; THIN FILM CIRCUITS; WORK FUNCTION;

EFFICIENT ELECTRON INJECTION; ELECTRICAL PERFORMANCE; FACILE MODIFICATIONS; HIGH-CAPACITANCE DENSITY; HIGH-PERFORMANCE; LARGE-SCALE MANUFACTURING; LOW VOLTAGE OPERATION; ORGANIC THIN FILM TRANSISTOR (OTFTS);

THIN FILM TRANSISTORS;

EID: 84908017245     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2014.07.032     Document Type: Article

References (45)

1. M. Halik, H. Klauk, U. Zschieschang, G. Schmid, C. Dehm, M. Schutz, S. Maisch, F. Effenberger, M. Brunnbauer, and F. Stellacci Nature 431 2004 963 966
2. H. Moon, R. Zeis, E.J. Borkent, C. Besnard, A.J. Lovinger, T. Siegrist, C. Kloc, and Z. Bao J. Am. Chem. Soc. 126 2004 15322 15323
3. B.J. Jung, K. Lee, J. Sun, A.G. Andreou, and H.E. Katz Adv. Funct. Mater. 20 2010 2930 2944
4. K.C. Dickey, J.E. Anthony, and Y.L. Loo Adv. Mater. 18 2006 1721 1726
5. M. Kitamura, S. Aomori, J.H. Na, and Y. Arakawa Appl. Phys. Lett. 93 2008 033313
6. T.D. Anthopoulos, B. Singh, N. Marjanovic, N.S. Sariciftci, A.M. Ramil, H. Sitter, M. Colle, and D.M. de Leeuw Appl. Phys. Lett. 89 2006 213504
7. B. Kippelen, X.H. Zhang, and B. Domercq Appl. Phys. Lett. 91 2007 092114
8. K. Itaka, M. Yamashiro, J. Yamaguchi, M. Haemori, S. Yaginuma, Y. Matsumoto, M. Kondo, and H. Koinuma Adv. Mater. 18 2006 1713 1716
9. Y.R. Su, C.L. Wang, W.G. Xie, F.Y. Xie, J. Chen, N. Zhao, and J.B. Xu ACS Appl. Mater. Interfaces 3 2011 4662 4667
10. Y.R. Su, W.G. Xie, Y. Li, Y. Shi, N. Zhao, and J.B. Xu J. Phys. D: Appl. Phys. 46 2013 095105
11. Y. Su, M. Wang, F. Xie, J. Chen, W. Xie, N. Zhao, and J. Xu Org. Electron. 14 2013 775 781
12. D. Liu, X. Xu, Y. Su, Z. He, J. Xu, and Q. Miao Angew. Chem. Int. Ed. 52 2013 1 7
13. C.A. Di, G. Yu, Y. Liu, X. Xu, D. Wei, Y. Song, Y. Sun, Y. Wang, D. Zhu, J. Liu, X. Liu, and D. Wu J. Am. Chem. Soc. 128 2006 16418 16419
14. C.A. Di, G. Yu, Y.Q. Liu, Y.L. Guo, Y. Wang, W.P. Wu, and D.B. Zhu Adv. Mater. 20 2008 1286 1290
15. Y.Q. Liu, C.A. Di, G. Yu, and D.B. Zhu Acc. Chem. Res. 42 2009 1573 1583
16. H. Ma, H.L. Yip, F. Huang, and A.K.Y. Jen Adv. Funct. Mater. 20 2010 1371 1388
17. H. Ishii, N. Hayashi, E. Ito, Y. Washizu, K. Sugi, Y. Kimura, M. Niwano, Y. Ouchi, and K.Seki Phys. Stat. Sol. A 201 2004 1075 1094
18. S.W. Cho, Y. Yi, J.H. Seo, C.Y. Kim, M. Noh, K.H. Yoo, K. Jeong, and C.N. Whang Synthetic Met. 157 2007 160 164
19. Y.H. Zhou, C. Fuentes-Hernandez, J. Shim, J. Meyer, A.J. Giordano, H. Li, P. Winget, T. Papadopoulos, H. Cheun, J. Kim, M. Fenoll, A. Dindar, W. Haske, E. Najafabadi, T.M. Khan, H. Sojoudi, S. Barlow, S. Graham, J.L. Bredas, S.R. Marder, A. Kahn, and B. Kippelen Science 336 2012 327 332
20. L. Yan, C. Punckt, I.A. Aksay, W. Mertin, and G. Bacher Nano Lett. 11 2011 3543 3549
21. Y.J. Yu, Y. Zhao, S. Ryu, L.E. Brus, K.S. Kim, and P. Kim Nano Lett. 9 2009 3430 3434
22. S. Rentenberger, A. Vollmer, E. Zojer, R. Schennach, and N. Koch J. Appl. Phys. 100 2006 053701
23. S. Scheinert, M. Grobosch, G. Paasch, I. Horselmann, M. Knupfer, and J. Bartsch J. Appl. Phys. 111 2012 064502
24. K. Shibata, K. Ishikawa, H. Takezoe, H. Wada, and T. Mori Appl. Phys. Lett. 92 2008 023305
25. A. Kumatani, Y. Li, P. Darmawan, T. Minari, and K. Tsukagoshi Sci. Rep. 3 2013 1026
26. G. Heimel, L. Romaner, J.L. Bredas, and E. Zojer Phys. Rev. Lett. 96 2006 196806
27. G. Heimel, L. Romaner, E. Zojer, and J.L. Bredas Acc. Chem. Res. 41 2008 721 729
28. H. Li, P. Paramonov, and J.L. Bredas J. Mater. Chem. 20 2010 2630 2637
29. C.W. Chu, V. Shrotriya, G. Li, and Y. Yang Appl. Phys. Lett. 88 2006 153504
30. B. Yang, F.W. Guo, Y.B. Yuan, Z.G. Xiao, Y.Z. Lu, Q.F. Dong, and J.S. Huang Adv. Mater. 25 2013 572 577
31. R.D. Yang, J. Park, C.N. Colesniuc, I.K. Schuller, J.E. Royer, W.C. Trogler, and A.C. Kummel J. Chem. Phys. 130 2009 164703 164708
32. H. Ma, O. Acton, D.O. Hutchins, N. Cernetic, and A.K.Y. Jen Phys. Chem. Chem. Phys. 14 2012 14110 14126
33. O. Acton, G. Ting, H. Ma, and A.K.Y. Jen Appl. Phys. Lett. 93 2008 083302
34. F. Colleaux, J.M. Ball, P.H. Wobkenberg, P.J. Hotchkiss, S.R. Marder, and T.D. Anthopoulos Phys. Chem. Chem. Phys. 13 2011 14387 14393
35. M. Shim, A. Javey, N.W. Shi Kam, and H. Dai J. Am. Chem. Soc. 123 2001 11512 11513
36. Y.X. Zhou, A. Gaur, S.H. Hur, C. Kocabas, M.A. Meitl, M. Shim, and J.A. Rogers Nano Lett. 4 2004 2031 2035
37. D.B. Farmer, R. Golizadeh-Mojarad, V. Perebeinos, Y.M. Lin, G.S. Tulevski, J.C. Tsang, and P. Avouris Nano Lett. 9 2008 388 392
38. S.W. Cho, J.H. Seo, C.Y. Kim, K.H. Yoo, K. Jeong, C.N. Whang, Y. Yi, S.J. Kang, and M. Noh Appl. Phys. Lett. 88 2006 151103
39. D.M. Nanditha, M. Dissanayake, R.A. Hatton, R.J. Curry, and S.R.P. Silva Appl. Phys. Lett. 90 2007 113505
40. C.W. Chu, C.F. Sung, D. Kekuda, L.F. Chu, Y.Z. Lee, F.C. Chen, and M.C. Wu Adv. Mater. 21 2009 4845 4849
41. M. Rapisarda, G. Fortunato, A. Valletta, S. Jacob, M. Benwadih, R. Coppard, I. Chartier, and L. Mariucci Appl. Phys. Lett. 101 2012 233304
42. J. Lee, D.H. Kim, B.L. Lee, J.I. Park, B. Yoo, J.Y. Kim, H. Moon, B. Koo, Y.W. Jin, and S. Lee J. Appl. Phys. 110 2011 084511
43. S.G. Mathijssen, M.J. Spijkman, A.M. Andringa, P.A. van Hal, I. McCulloch, M. Kemerink, R.A. Janssen, and D.M. de Leeuw Adv. Mater. 22 2010 5105 5109
44. H. Sirringhaus, and T. Richards Appl. Phys. Lett. 92 2008 023512
45. K. Kuribara, H. Wang, N. Uchiyama, K. Fukuda, T. Yokota, U. Zschieschang, C. Jaye, D. Fischer, H. Klauk, T. Yamamoto, K. Takimiya, M. Ikeda, H. Kuwabara, T. Sekitani, Y.L. Loo, and T. Someya Nat. Commun. 3 2012 723