Characterization of bias stress induced electrical instability in liquid-crystalline semiconducting polymer thin-film transistors

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Lee, Jiyoul ^a   Hwan Kim, Do ^a   Lee, Bang Lin ^a   Park, Jeong Il ^a   Yoo, Byungwook ^a   Young Kim, Joo ^a   Moon, Hyunsik ^a   Koo, Bonwon ^a   Wan Jin, Yong ^a   Lee, Sangyoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; ALTERNATING CURRENT; BIAS STRESS; BITHIAZOLE; CHARGE DE-TRAPPING; DC BIAS; DEEP TRAPS; DIRECT CURRENT; DISPERSION PARAMETERS; DONOR-ACCEPTORS; DRAIN-SOURCE VOLTAGE; ELECTRICAL INSTABILITY; ELECTRON-ACCEPTING; ELECTRON-DONATING; GATE-DRAIN VOLTAGES; LIQUID-CRYSTALLINE; OPPOSITE CHARGE; ORGANIC THIN FILM TRANSISTORS; QUATERTHIOPHENE; RECOVERY RATE; STRESS CONDITION; STRESS TIME; STRETCHED EXPONENTIAL; TIME CONSTANTS; TRAPPING TIME;

CHARGE TRAPPING; CRYSTALLINE MATERIALS; DRAIN CURRENT; LIQUIDS; ORGANIC POLYMERS; POLYMERIC FILMS; RECOVERY; THIN FILM TRANSISTORS;

BIAS VOLTAGE;

EID: 80655128529     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3656442     Document Type: Article

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