Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Applied Physics Letters

Volumn 105, Issue 14, 2014, Pages

  Li, Xiao Hang ^a   Detchprohm, Theeradetch ^a   Kao, Tsung Ting ^a   Satter, Md Mahbub ^a   Shen, Shyh Chiang ^a   Douglas Yoder, P ^a   Dupuis, Russell D ^a,d   Wang, Shuo ^b   Wei, Yong O ^b   Xie, Hongen ^b   Fischer, Alec M ^b   Ponce, Fernando A ^b   Wernicke, Tim ^c   Reich, Christoph ^c   Martens, Martin ^c   Kneissl, Michael ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW THRESHOLDS; SAPPHIRE SUBSTRATES;

EID: 84907906612     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4897527     Document Type: Article

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