Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 9, 2013, Pages 1768-1770

  Lochner, Zachary ^a   Li, Xiao Hang ^a   Kao, Tsung Ting ^a   Satter, Md Mahbub ^a   Kim, Hee Jin ^a   Shen, Shyh Chiang ^a   Yoder, P Douglas ^a   Ryou, Jae Hyun ^a,b   Dupuis, Russell D ^a   Sun, Kewei ^c   Wei, Yong ^c   Li, Ti ^c   Fischer, Alec ^c   Ponce, Fernando A ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

AlGaInN; III V semiconductors; lasers; metalorganic chemical vapor deposition; MOCVD

Indexed keywords

ALGAINN; DEEP ULTRAVIOLET LASERS; HOLE INJECTION LAYERS; II-IV SEMICONDUCTORS; SAPPHIRE SUBSTRATES; SUBSTANTIAL REDUCTION; THREADING DISLOCATION DENSITIES; THRESHOLD POWER DENSITY;

LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PUMPING (LASER); RESISTORS; SAPPHIRE; SEMICONDUCTOR LASERS; ULTRAVIOLET LASERS;

HETEROJUNCTIONS;

EID: 84884978449     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201329013     Document Type: Article

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