Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Applied Physics Letters

Volumn 103, Issue 21, 2013, Pages

  Kao, Tsung Ting ^a   Liu, Yuh Shiuan ^a   Mahbub Satter, Md ^a   Li, Xiao Hang ^a   Lochner, Zachary ^a   Douglas Yoder, P ^a   Detchprohm, Theeradetch ^a   Dupuis, Russell D ^a,c   Shen, Shyh Chiang ^a   Ryou, Jae Hyun ^a,d   Fischer, Alec M ^b   Wei, Yong ^b   Xie, Hongen ^b   Ponce, Fernando A ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c Georgia Institute of Technology   (United States)

^d UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP ULTRAVIOLET LASERS; DIELECTRIC MIRRORS; HETEROSTRUCTURE LASERS; HIGH REFLECTIVITY; MULTI-QUANTUM WELL STRUCTURES; OPTICALLY PUMPED; PUMPING POWER DENSITY; ROOM TEMPERATURE;

ALUMINUM; MIRRORS; ULTRAVIOLET LASERS;

HAFNIUM OXIDES;

EID: 84888417187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4829477     Document Type: Article

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