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Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

(7) Northrup, J E a Chua, C L a Yang, Z a Wunderer, T a Kneissl, M a,b Johnson, N M a Kolbe, T b

a PALO ALTO RESEARCH CENTER (United States)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN; BARRIER COMPOSITIONS; BULK ALN; C-PLANE SUBSTRATES; EFFECT OF STRAIN; EMITTED LIGHT; LIGHT EMITTERS; MODEL CALCULATIONS; MULTIQUANTUM WELLS; QUANTUM WELL; SWITCH-ON; TRANSVERSE ELECTRIC POLARIZATIONS; TRANSVERSE MAGNETIC POLARIZATION;

ELECTRIC SWITCHES; LIGHT EMISSION; NITRIDES; POLARIZATION; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84862925220 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3675451 Document Type: Article

Times cited : (158)

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