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Volumn 102, Issue 10, 2013, Pages

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

(13) Lochner, Zachary a Kao, Tsung Ting a Liu, Yuh Shiuan a Li, Xiao Hang a Mahbub Satter, Md a Shen, Shyh Chiang a Douglas Yoder, P a Ryou, Jae Hyun a,b Dupuis, Russell D a,d Wei, Yong c Xie, Hongen c Fischer, Alec c Ponce, Fernando A c

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b University of Houston (United States)

c ARIZONA STATE UNIVERSITY (United States)

d Georgia Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BUFFER LAYERS; EPITAXIALLY GROWN; HOMOEPITAXIAL GROWTH; MULTI-QUANTUM WELL STRUCTURES; PULSED EXCIMER LASERS; ROOM TEMPERATURE; THRESHOLD PUMP POWER; TRANSVERSE ELECTRICS;

ALUMINUM; EPITAXIAL GROWTH; EXCIMER LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; SEMICONDUCTING ALUMINUM COMPOUNDS;

RESISTORS;

EID: 84875180180 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4795719 Document Type: Article

Times cited : (85)

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