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Volumn 96, Issue 14, 2010, Pages

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

(9) Jmerik, V N a Mizerov, A M a Sitnikova, A A a Kop'Ev, P S a Ivanov, S V a Lutsenko, E V b Tarasuk, N P b Rzheutskii, N V b Yablonskii, G P b

a IOFFE INSTITUTE (Russian Federation)

b B I STEPANOV INSTITUTE OF PHYSICS (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ASYMMETRIC WAVEGUIDES; C-SAPPHIRE; DIGITAL ALLOYING; EXCITATION DENSITY; GRADED BUFFER; HETEROSTRUCTURES; LOW TEMPERATURES; LOW THRESHOLDS; MULTIPLE QUANTUM WELLS; OPTIMUM DESIGNS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM WELL; SELF-ORGANIZED; SEPARATE CONFINEMENT; SUBMONOLAYER; THREADING DISLOCATION DENSITIES;

ALLOYING; CRYSTAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICALLY PUMPED LASERS; PUMPING (LASER); SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; STRUCTURAL OPTIMIZATION; WAVEGUIDES;

QUANTUM WELL LASERS;

EID: 77951146744 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3373834 Document Type: Article

Times cited : (56)

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