Effect of thermal annealing on TSV Cu protrusion and local stress

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2014, Pages 1116-1121

  Jing, Xiangmeng ^a,b   He, Hongwen ^a,b   Ji, Liang ^a   Xu, Cheng ^a   Xue, Kai ^a   Su, Meiying ^a,b   Song, Chongshen ^a,b   Yu, Daquan ^a,b   Cao, Liqiang ^a,b   Zhang, Wenqi ^a   Shangguan, Dongkai ^a,b  

^a National Center for Advanced Packaging   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; ELECTRONICS PACKAGING;

ANNEALING CONDITION; ANNEALING TEMPERATURES; HIGH-EFFICIENCY; OPTICAL PROFILER; THERMAL-ANNEALING; THERMO-MECHANICAL BEHAVIORS; THREE-DIMENSIONAL (3D) INTEGRATED CIRCUITS; THROUGH SILICON VIAS;

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 84907901402     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2014.6897429     Document Type: Conference Paper

References (14)

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