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Applied Physics Letters

Volumn 105, Issue 13, 2014, Pages

High temperature study of flexible silicon-on-insulator fin field-effect transistors

(4) Diab, Amer a Torres Sevilla, Galo A a Ghoneim, Mohamed T a Hussain, Muhammad M a

a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

FIN FIELD-EFFECT TRANSISTORS; HIGH TEMPERATURE;

EID: 84907805943 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4897148 Document Type: Article

Times cited : (6)

References (26)

1
- 80052413216
- J. A. Rogers, M. G. Lagally, and R. G. Nuzzo, Nature 477 (7362), 45 (2011). 10.1038/nature10381
- (2011) Nature , vol.477 , Issue.7362 , pp. 45
- Rogers, J.A.¹ Lagally, M.G.² Nuzzo, R.G.³

2
- 34247371078
- Y. Xia, V. Kalihari, C. Daniel Frisbie, N. K. Oh, and J. A. Rogers, Appl. Phys. Lett. 90 (16), 162106 (2007); 10.1063/1.2724895
- (2007) Appl. Phys. Lett. , vol.90 , Issue.16 , pp. 162106
- Xia, Y.¹ Kalihari, V.² Frisbie, C.D.³ Oh, N.K.⁴ Rogers, J.A.⁵

3
- 84855256745
- P. Lin and F. Yan, Adv. Mater. 24 (1), 34 (2012); 10.1002/adma.201103334
- (2012) Adv. Mater. , vol.24 , Issue.1 , pp. 34
- Lin, P.¹ Yan, F.²

4
- 59849109089
- J. N. Burghartz, W. Appel, H. D. Rempp, and M. Zimmermann, IEEE Trans. Electron Devices 56 (2), 321 (2009); 10.1109/TED.2009.2010581
- (2009) IEEE Trans. Electron Devices , vol.56 , Issue.2 , pp. 321
- Burghartz, J.N.¹ Appel, W.² Rempp, H.D.³ Zimmermann, M.⁴

5
- 84900028533
- G. A. Sevilla, J. P. Rojas, H. M. Fahad, A. M. Hussain, R. Ghanem, C. E. Smith, and M. M. Hussain, Adv. Mater. 26 (18), 2794 (2014). 10.1002/adma.201305309
- (2014) Adv. Mater. , vol.26 , Issue.18 , pp. 2794
- Sevilla, G.A.¹ Rojas, J.P.² Fahad, H.M.³ Hussain, A.M.⁴ Ghanem, R.⁵ Smith, C.E.⁶ Hussain, M.M.⁷

6
- 78650596906
- J. Sun, B. Zhang, and H. E. Katz, Adv. Funct. Mater. 21 (1), 29 (2011); 10.1002/adfm.201001530
- (2011) Adv. Funct. Mater. , vol.21 , Issue.1 , pp. 29
- Sun, J.¹ Zhang, B.² Katz, H.E.³

7
- 78650762823
- J. N. Tiwari, J. Singh Meena, C.-S. Wu, R. N. Tiwari, M.-C. Chu, F.-C. Chang, and F.-H. Ko, ChemSusChem 3 (9), 1051 (2010); 10.1002/cssc.201000118
- (2010) ChemSusChem , vol.3 , Issue.9 , pp. 1051
- Tiwari, J.N.¹ Meena, J.S.² Wu, C.-S.³ Tiwari, R.N.⁴ Chu, M.-C.⁵ Chang, F.-C.⁶ Ko, F.-H.⁷

8
- 84876552660
- A. Bag, M. K. Hota, S. Mallik, and C. K. Maiti, Semicond. Sci. Technol. 28 (5), 055002 (2013). 10.1088/0268-1242/28/5/055002
- (2013) Semicond. Sci. Technol. , vol.28 , Issue.5 , pp. 055002
- Bag, A.¹ Hota, M.K.² Mallik, S.³ Maiti, C.K.⁴

9
- 0037250348
- Y. Lee, L. Handong, and S. J. Fonash, IEEE Electron Device Lett. 24 (1), 19 (2003); 10.1109/LED.2002.807021
- (2003) IEEE Electron Device Lett. , vol.24 , Issue.1 , pp. 19
- Lee, Y.¹ Handong, L.² Fonash, S.J.³

10
- 3242707892
- E. Menard, K. J. Lee, D.-Y. Khang, R. G. Nuzzo, and J. A. Rogers, Appl. Phys. Lett. 84 (26), 5398 (2004); 10.1063/1.1767591
- (2004) Appl. Phys. Lett. , vol.84 , Issue.26 , pp. 5398
- Menard, E.¹ Lee, K.J.² Khang, D.-Y.³ Nuzzo, R.G.⁴ Rogers, J.A.⁵

11
- 21044450378
- E. Menard, R. G. Nuzzo, and J. A. Rogers, Appl. Phys. Lett. 86 (9), 093507 (2005); 10.1063/1.1866637
- (2005) Appl. Phys. Lett. , vol.86 , Issue.9 , pp. 093507
- Menard, E.¹ Nuzzo, R.G.² Rogers, J.A.³

12
- 17644384476
- Z.-T. Zhu, E. Menard, K. Hurley, R. G. Nuzzo, and J. A. Rogers, Appl. Phys. Lett. 86 (13), 133507 (2005); 10.1063/1.1894611
- (2005) Appl. Phys. Lett. , vol.86 , Issue.13 , pp. 133507
- Zhu, Z.-T.¹ Menard, E.² Hurley, K.³ Nuzzo, R.G.⁴ Rogers, J.A.⁵

13
- 33744530680
- S. Mack, M. A. Meitl, A. J. Baca, Z.-T. Zhu, and J. A. Rogers, Appl. Phys. Lett. 88 (21), 213101 (2006); 10.1063/1.2206688
- (2006) Appl. Phys. Lett. , vol.88 , Issue.21 , pp. 213101
- Mack, S.¹ Meitl, M.A.² Baca, A.J.³ Zhu, Z.-T.⁴ Rogers, J.A.⁵

14
- 33749024420
- S. A. Stauth and B. A. Parviz, Proc. Natl. Acad. Sci. 103 (38), 13922 (2006); 10.1073/pnas.0602893103
- (2006) Proc. Natl. Acad. Sci. , vol.103 , Issue.38 , pp. 13922
- Stauth, S.A.¹ Parviz, B.A.²

15
- 58149506088
- H.-C. Yuan, J. Shin, G. Qin, L. Sun, P. Bhattacharya, M. G. Lagally, G. K. Celler, and Z. Ma, Appl. Phys. Lett. 94 (1), 013102 (2009). 10.1063/1.3062938
- (2009) Appl. Phys. Lett. , vol.94 , Issue.1 , pp. 013102
- Yuan, H.-C.¹ Shin, J.² Qin, G.³ Sun, L.⁴ Bhattacharya, P.⁵ Lagally, M.G.⁶ Celler, G.K.⁷ Ma, Z.⁸

16
- 84872111074
- D. Shahrjerdi and S. W. Bedell, Nano Lett. 13 (1), 315 (2013). 10.1021/nl304310x
- (2013) Nano Lett. , vol.13 , Issue.1 , pp. 315
- Shahrjerdi, D.¹ Bedell, S.W.²

17
- 84874222684
- J. P. Rojas, G. T. Sevilla, and M. M. Hussain, Appl. Phys. Lett. 102 (6), 064102 (2013). 10.1063/1.4791693
- (2013) Appl. Phys. Lett. , vol.102 , Issue.6 , pp. 064102
- Rojas, J.P.¹ Sevilla, G.T.² Hussain, M.M.³

18
- 77649185643
- M. M. Hussain, C. E. Smith, H. Rusty Harris, C. D. Young, T. Hsing-Huang, and R. Jammy, IEEE Trans. Electron Devices 57 (3), 626 (2010). 10.1109/TED.2009.2039097
- (2010) IEEE Trans. Electron Devices , vol.57 , Issue.3 , pp. 626
- Hussain, M.M.¹ Smith, C.E.² Harris, H.R.³ Young, C.D.⁴ Hsing-Huang, T.⁵ Jammy, R.⁶

19
- 0024718364
- D. S. Jeon and D. E. Burk, IEEE Trans. Electron Devices 36 (8), 1456 (1989). 10.1109/16.30959
- (1989) IEEE Trans. Electron Devices , vol.36 , Issue.8 , pp. 1456
- Jeon, D.S.¹ Burk, D.E.²

20
- 33644633458
- J. Colinge, L. Floyd, A. J. Quinn, G. Redmond, J. C. Alderman, W. Xiong, C. R. Cleavelin, T. Schulz, K. Schruefer, G. Knoblinger, and P. Patruno, IEEE Electron Device Lett. 27 (3), 172 (2006). 10.1109/LED.2006.869941
- (2006) IEEE Electron Device Lett. , vol.27 , Issue.3 , pp. 172
- Colinge, J.¹ Floyd, L.² Quinn, A.J.³ Redmond, G.⁴ Alderman, J.C.⁵ Xiong, W.⁶ Cleavelin, C.R.⁷ Schulz, T.⁸ Schruefer, K.⁹ Knoblinger, G.¹⁰ Patruno, P.¹¹

21
- 41149171855
- J. Kavalieros, B. Doyle, S. Datta, G. Dewey, M. Doczy, B. Jin, D. Lionberger, M. Metz, W. Rachmady, M. Radosavljevic, U. Shah, N. Zelick, and R. Chau, Int. Symp. VLSI Technol. 2006, 50-51. 10.1109/VLSIT.2006.1705211
- Int. Symp. VLSI Technol. , vol.2006 , pp. 50-51
- Kavalieros, J.¹ Doyle, B.² Datta, S.³ Dewey, G.⁴ Doczy, M.⁵ Jin, B.⁶ Lionberger, D.⁷ Metz, M.⁸ Rachmady, W.⁹ Radosavljevic, M.¹⁰ Shah, U.¹¹ Zelick, N.¹² Chau, R.¹³

22
- 3042661896
- in 2004.
- D. Rideau, A. Dray, F. Gilibert, F. Agut, L. Giguerre, G. Gouget, M. Minondo, and A. Juge, in 2004 Int. Conf. on Microelectron. Test Struct. 2004, 149-154. 10.1109/ICMTS.2004.1309469
- Int. Conf. on Microelectron. Test Struct. , vol.2004 , pp. 149-154
- Rideau, D.¹ Dray, A.² Gilibert, F.³ Agut, F.⁴ Giguerre, L.⁵ Gouget, G.⁶ Minondo, M.⁷ Juge, A.⁸

23
- 84907697695
- M. Lemme, T. Mollenhauer, W. Henschel, T. Wahlbrink, H. Gottlob, J. Efavi, M. Baus, O. Winkler, B. Spangenberg, and H. Kurz, Proc. Eur. Solid-State Device Res. 2003, 123-126. 10.1109/ESSDERC.2003.1256826
- Proc. Eur. Solid-State Device Res. , vol.2003 , pp. 123-126
- Lemme, M.¹ Mollenhauer, T.² Henschel, W.³ Wahlbrink, T.⁴ Gottlob, H.⁵ Efavi, J.⁶ Baus, M.⁷ Winkler, O.⁸ Spangenberg, B.⁹ Kurz, H.¹⁰

24
- 33847394370
- T. Hoffmann, G. Doornbos, I. Ferain, N. Collaert, P. Zimmerman, M. Goodwin, R. Rooyackers, A. Kottantharayil, Y. Yim, A. Dixit, K. De Meyer, M. Jurczak, and S. Biesemans, IEEE Int. Electron Devices Meet. 2005, 725-728. 10.1109/IEDM.2005.1609455
- IEEE Int. Electron Devices Meet. , vol.2005 , pp. 725-728
- Hoffmann, T.¹ Doornbos, G.² Ferain, I.³ Collaert, N.⁴ Zimmerman, P.⁵ Goodwin, M.⁶ Rooyackers, R.⁷ Kottantharayil, A.⁸ Yim, Y.⁹ Dixit, A.¹⁰ Meyer, K.D.¹¹ Jurczak, M.¹² Biesemans, S.¹³

25
- 0023998758
- G. Ghibaudo, Electron. Lett. 24 (9), 543 (1988). 10.1049/el:19880369
- (1988) Electron. Lett. , vol.24 , Issue.9 , pp. 543
- Ghibaudo, G.¹

26
- 0004005306
- 2nd ed. (Wiley Press, New York).
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley Press, New York, 1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

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