Dominantly epitaxial growth of graphene on Ni (1 1 1) substrate

Applied Surface Science

Volumn 314, Issue , 2014, Pages 490-499

  Fogarassy, Zsolt ^a   Rümmeli, Mark H ^b,c   Gorantla, Sandeep ^d   Bachmatiuk, Alicja ^b,c,d   Dobrik, Gergely ^a   Kamarás, Katalin ^a   Biró, László Péter ^a   Havancsák, Károly ^e   Lábár, János L ^a  

^a INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^b Institute for Basic Science   (South Korea)

^c Sungkyunkwan University   (South Korea)

^d IFW DRESDEN   (Germany)

^e EÖTVÖS LORÁND UNIVERSITY   (Hungary)

Author keywords

CVD; Epitaxy; Graphene; Nickel; STM; TEM

Indexed keywords

ATMOSPHERIC MOVEMENTS; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; FLOW OF GASES; GRAPHENE; NICKEL; SAPPHIRE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

DEPOSITION TEMPERATURES; DOMINANT ORIENTATION; ELECTRON DIFFRACTION STUDY; EPITAXIAL GRAPHENE; GROWTH PARAMETERS; LARGE-AREA GRAPHENE; SINGLE CRYSTAL SAPPHIRES; THIN FILM SUBSTRATE;

EPITAXIAL GROWTH;

EID: 84906708538     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.06.197     Document Type: Article

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