Intercalation of metal islands and films at the interface of epitaxially grown graphene and Ru(0001) surfaces

Applied Physics Letters

Volumn 99, Issue 16, 2011, Pages

  Huang, Li ^a   Pan, Yi ^a   Pan, Lida ^a   Gao, Min ^a   Xu, Wenyan ^a   Que, Yande ^a   Zhou, Haitao ^a   Wang, Yeliang ^a   Du, Shixuan ^a   Gao, H J ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

C-C BONDS; DEFECT FORMATION; EPITAXIAL GRAPHENE; EPITAXIALLY GROWN; GRAPHENE LATTICES; GRAPHENE LAYERS; HIGH QUALITY; HIGH TEMPERATURE; MAGNETIC METALS; METAL ISLANDS; MICROSCOPY IMAGES; MODEL-BASED OPC; RARE EARTH METALS; RU(0001); SELF-HEALING; THEORETICAL CALCULATIONS; UNIVERSAL APPROACH;

CERIUM; COBALT; EPITAXIAL GROWTH; GOLD; GRAPHENE; PALLADIUM; PLATINUM; SCANNING TUNNELING MICROSCOPY;

METALS;

EID: 80155140143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3653241     Document Type: Article

References (20)

1. A. K. Geim and K. S. Novoselov, Nat. Mater. 6, 183 (2007). 10.1038/nmat1849
2. S. Marchini, S. Gnther, and J. Wintterlin, Phys. Rev. B 76, 075429 (2007). 10.1103/PhysRevB.76.075429
3. Y. Pan, D. X. Shi, and H.-J. Gao, Chin. Phys. 16, 3151 (2007). 10.1088/1009-1963/16/11/001
4. P. W. Sutter, J. I. Flege, and E. A. Sutter, Nat. Mater. 7, 406 (2008). 10.1038/nmat2166
5. A. L. Vzquez de Parga, F. Calleja, B. Borca, M. C. G. Passeggi, J. J. Hinarejos, F. Guinea, and R. Miranda, Phys. Rev. Lett. 100, 056807 (2008). 10.1103/PhysRevLett.100.056807
6. Y. Pan, H. G. Zhang, D. X. Shi, J. T. Sun, S. X. Du, F. Liu, and H.-J. Gao, Adv. Mater. 21, 2777 (2009). 10.1002/adma.200800761
7. H. G. Zhang, H. Hu, Y. Pan, J. H. Mao, M. Gao, H. M. Guo, S. X. Du, T. Greber, and H.-J. Gao, J. Phys.: Condens. Matter 22, 399802 (2010). 10.1088/0953-8984/22/39/399802
8. A. M. Shikin, G. V. Prudnikova, V. K. Adamchuk, F. Moresco, and K.-H. Rieder, Phys. Rev. B 62, 13202 (2000). 10.1103/PhysRevB.62.13202
9. A. Varykhalov, J. Snchez-Barriga, A. M. Shikin, C. Biswas, E. Vescovo, A. Rybkin, D. Marchenko, and O. Rader, Phys. Rev. Lett. 101, 157601 (2008). 10.1103/PhysRevLett.101.157601
10. C. Enderlein, Y. S. Kim, A. Bostwick, E. Rotenberg, and K. Horn, New J. Phys. 12, 033014 (2010). 10.1088/1367-2630/12/3/033014
11. D. Faras, A. M. Shikin, K.-H. Rieder, and Y. S. Dedkov, J. Phys.: Condens. Matter 11, 8453 (1999). 10.1088/0953-8984/11/43/308
12. A. G. Starodubov, M. A. Medvetski, A. M. Shikin, and V. K. Adamchuk, Phys. Solid State 46, 1340 (2004). 10.1134/1.1778462
13. Y. Dedkov, A. Shikin, V. Adamchuk, S. Molodtsov, C. Laubschat, A. Bauer, and G. Kaindl, Phys. Rev. B 64, 035405 (2001). 10.1103/PhysRevB.64.035405
14. B. Premlal, M. Cranney, F. Vonau, D. Aubel, D. Casterman, M. M. De Souza, and L. Simon, Appl. Phys. Lett. 94, 263115 (2009). 10.1063/1.3168502
15. B. Wang, M. L. Bocquet, S. Marchini, S. Gnther, and J. Wintterlin, Phys. Chem. Chem. Phys. 10, 3530 (2008). 10.1039/b801785a
16. E. Sutter, D. P. Acharya, J. T. Sadowski, and P. Sutter, Appl. Phys. Lett. 94, 133101 (2009). 10.1063/1.3106057
17. M. Corso, W. Auwarter, M. Muntwiler, A. Tamai, T. Greber, and J. Osterwalder, Science 303, 217 (2004). 10.1126/science.1091979
18. N. R. Gall, E. V. Rut'kov, and A. Y. Tontegode, Semiconductors 36, 276 (2002). 10.1134/1.1461403
19. G. Henkelman, B. P. Uberuaga, and H. Jonsson, J. Chem. Phys. 113, 9901 (2000). 10.1063/1.1329672
20. G. Henkelman and H. Jonsson, J. Chem. Phys. 113, 9978 (2000). 10.1063/1.1323224