Kinetics of low-pressure, low-temperature graphene growth: Toward single-layer, single-crystalline structure

ACS Nano

Volumn 6, Issue 11, 2012, Pages 10276-10286

  Mehdipour, Hamid ^a,b   Ostrikov, Kostya ^a,b  

^a CSIRO   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

elementary surface processes; graphene; graphene coverage; nucleation

Indexed keywords

CRYSTALLINE STRUCTURE; GASPHASE; GRAPHENE GROWTH; ISLAND DENSITY; KINETIC MODELS; LOW CARBON; LOW TEMPERATURE CVD; LOW TEMPERATURES; METAL CATALYST; MONOLAYER FORMATION; NUCLEATION AND GROWTH; NUMBER OF LAYERS; PRESSURE RANGES; QUANTITATIVE AGREEMENT; SINGLE LAYER; SINGLE-CRYSTAL STRUCTURE; SINGLE-CRYSTALLINE STRUCTURES; SURFACE COVERAGES; SURFACE PROCESS;

CATALYSTS; ELECTRONS; GRAIN BOUNDARIES; GROWTH KINETICS; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; NUCLEATION; TEMPERATURE;

GRAPHENE;

GRAPHITE; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CRYSTALLIZATION; GAS; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; GASES; GRAPHITE; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOSTRUCTURES; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 84870435987     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3041446     Document Type: Article

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