Nickel carbide as a source of grain rotation in epitaxial graphene

ACS Nano

Volumn 6, Issue 4, 2012, Pages 3564-3572

  Jacobson, Peter ^a,b   Stöger, Bernhard ^b   Garhofer, Andreas ^b,c   Parkinson, Gareth S ^b   Schmid, Michael ^b   Caudillo, Roman ^d   Mittendorfer, Florian ^b,c   Redinger, Josef ^b,c   Diebold, Ulrike ^b  

^a Tulane University   (United States)

^b Institute of Applied Physics   (Austria)

^c CENTER FOR COMPUTATIONAL MATERIALS SCIENCE   (Austria)

^d INTEL CORPORATION   (United States)

Author keywords

chemical vapor deposition; DFT; grain boundary; nickel; polycrystalline graphene; STM

Indexed keywords

C-DOMAIN; DENSITY FUNCTIONAL THEORY CALCULATIONS; DFT; EPITAXIAL GRAPHENE; GRAIN ROTATION; GRAPHENE GROWTH; LATTICE MATCH; NICKEL CARBIDE; POLYCRYSTALLINE; STM; SURFACE PHASIS; VACANCY ISLANDS; VAN DER WAALS;

CARBIDES; CHEMICAL VAPOR DEPOSITION; DENSITY FUNCTIONAL THEORY; EPITAXIAL GROWTH; GRAIN BOUNDARIES; NICKEL; PHASE SEPARATION; ROTATION; SCANNING TUNNELING MICROSCOPY; VAN DER WAALS FORCES; VAPORS;

GRAPHENE;

EID: 84860357304     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300625y     Document Type: Article

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