Use of permanent marker to deposit a protection layer against FIB damage in TEM specimen preparation

Journal of Microscopy

Volumn 255, Issue 3, 2014, Pages 180-187

  Park, Y C ^a   Park, B C ^b   Romankov, S ^c   Park, K J ^a   Yoo, J H ^a   Lee, Y B ^a   Yang, J M ^a  

^a National Nano Fab Center (NNFC)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Chungbuk National University   (South Korea)

Author keywords

Direct writing; FIB; Permanent marker deposition; Protection layer; Specimen preparation; TEM

Indexed keywords

AMORPHOUS CARBON; ASPECT RATIO; DEPOSITS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONS; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY DISSIPATION; FOCUSED ION BEAMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IONS;

BEAM DAMAGE; DEEP TRENCH; DEPOSITION LAYERS; DIRECT-WRITING; FIB; FILLING IN; FOCUSED IONS BEAMS; PERMANENT MARKER DEPOSITION; PROTECTION LAYERS; SIMPLE++;

SPECIMEN PREPARATION;

CARBON; MARKER;

ARTICLE; ELECTRON BEAM; ELECTRON ENERGY LOSS SPECTROSCOPY; FOCUSED ION BEAM; PERMANENT MARKER DEPOSITION; PRIORITY JOURNAL; ROENTGEN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84906085561     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/jmi.12150     Document Type: Article

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